Related papers: Deterministic magnetization switching using latera…
Previous studies have demonstrated spin-orbit torque (SOT) switching of Mn3Sn where the spin polarization lies in the kagome plane (configuration I). However, the critical current density ($ J_{crit}$) is unrealistically large ($…
Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a…
Spin torques play a crucial role in operative properties of modern spintronic devices. To study current-driven magnetization dynamics, spin-torque terms providing the action of spin-polarized currents have previously often been added in a…
Magnetic heterostructure Mo/CoFeB/MgO has strong perpendicular magnetic anisotropy and thermal stability. Through current-induced hysteresis loop shift measurements, we show that the dampinglike spin-orbit torque (SOT) efficiency of…
Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is…
We report the first demonstration of the current-induced magnetization switching in a perpendicularly magnetized A1 CoPt single layer. We show that good perpendicular magnetic anisotropy can be obtained in a wide composition range of the A1…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
We demonstrate a deterministic switching mechanism in collinear altermagnets driven by asymmetric sublattice spin currents. Unlike conventional antiferromagnets, where combined parity-time-reversal symmetry enforces purely staggered…
The writing process of SOT-MRAMs is considered deterministic when additional symmetry-breaking factors, such as the application of an external magnetic field aligned with the current, are present. Notably, the write probability exhibits a…
We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
Recently, spin-transfer torque (STT) based magnetization switching has been widely utilized in magnetic resistance-based memories, which have broad applications in microcontroller units and other devices. This study utilizes a macrospin…
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a…
Processing-in-memory (PIM) reduces data transfer latency by rolling memory and logic elements into one compute location. As an emergent material candidate for such an architecture, we propose a strained Weyl semimetal based…
We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…
A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the…
Recent discovery of spin-orbit torques (SOTs) within magnetic single-layers has attracted attention in the field of spintronics. However, it has remained elusive as to how to understand and how to tune the SOTs. Here, utilizing the single…
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike…
Magnetic skyrmions are currently the most promising option to realize current-driven magnetic shift registers. A variety of concepts to create skyrmions were proposed and demonstrated. However, none of the reported experiments show…
Spin-orbit torques (SOTs) from transition metal dichalcogenides systems (TMDs) in conjunction with ferromagnetic materials are recently attractive in spintronics for their versatile features. However, most of the previously studied…