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Few-layer black phosphorus was recently rediscovered as a narrow-bandgap atomically thin semiconductor and has already attracted unprecedented attention due to its interesting properties. One feature of this material that sets it apart from…
Thermodynamic properties as well as low-energy magnon excitations of $S=1$ honeycomb-layered Na$_3$Ni$_2$SbO$_6$ have been investigated by high-resolution dilatometry, static magnetisation, and high-frequency electron spin resonance studies…
Two-dimensional materials with strong bandstructure anisotropy such as black phosphorus BP have been identified as attractive candidates for logic application due to their potential high carrier velocity and large density-of-states.…
Black phosphorus (BP) has recently emerged as an alternative 2D semiconductor owing to its fascinating electronic properties such as tunable bandgap and high charge carrier mobility. The structural investigation of few-layer BP, such as…
Semi-Dirac semimetals have received enthusiastic research both theoretically and experimentally in the recent years. Due to the anisotropic dispersion, its physical properties are highly direction-dependent. In this work we employ the…
As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport…
The quantum interference effects induced by the topological phase are studied analytically in biaxial antiferromagnets with an external magnetic field at an arbitrarily angle. This study provides a nontrivial generalization of the Kramers…
Anisotropy describes the directional dependence of a material's properties such as transport and optical response. In conventional bulk materials, anisotropy is intrinsically related to the crystal structure, and thus not tunable by the…
We investigate the role of pseudospin structure of few-layer black phosphorus (BP) in interband tunneling properties in lateral BP junctions. We find that interband tunneling is critically dependent on junction directions because of the…
Black phosphorus (P) has emerged as a layered semiconductor with a unique crystal structure featuring corrugated atomic layers and strong in-plane anisotropy in its physical properties. Here, we demonstrate that the crystal orientation and…
Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FET) is investigated in this work. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction.…
Using first principles calculations we showed that the electronic and optical properties of single layer black phosphorus (BP) depend strongly on the applied strain. Due to the strong anisotropic atomic structure of BP, its electronic…
Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the devices is demonstrated on few-layer phosphorene and ultra-thin BP…
We study the quantum Hall effect of 2D electron gas in black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic field leads to a quantization of the energy…
Valley coherence is of great significance for exploring fundamental quantum phenomena and developing next-generation valleytronic devices. Herein, we theoretically investigate the valley quantum interference engineered by inter-Landau level…
We investigate theoretically the effects of modulated periodic perpendicular magnetic fields on the electronic states and optical absorption spectrum in a monolayer black phosphorus (phosphorene). We demonstrate that different phosphorene…
Newly fabricated monolayer phosphorene and its few-layer structures are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By…
We study the correlation energy, the effective anisotropy parameter, and quantum fluctuations of the pseudospin magnetization in bilayer quantum Hall systems at total filling factor nu=1 by means of exact diagonalizations of the Hamiltonian…
The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…
Changes in the spin configuration of atomically-thin, magnetic van-der-Waals multilayers can cause drastic modifications in their opto-electronic properties. Conversely, the opto-electronic response of these systems provides information…