English

Determining the phase diagram of atomically thin layered antiferromagnet CrCl$_3$

Mesoscale and Nanoscale Physics 2020-05-28 v1

Abstract

Changes in the spin configuration of atomically-thin, magnetic van-der-Waals multilayers can cause drastic modifications in their opto-electronic properties. Conversely, the opto-electronic response of these systems provides information about the magnetic state, very difficult to obtain otherwise. Here we show that in CrCl3_3 multilayers, the dependence of the tunnelling conductance on applied magnetic field (HH), temperature (TT), and number of layers (NN) tracks the evolution of the magnetic state, enabling the magnetic phase diagram of these systems to be determined experimentally. Besides a high-field spin-flip transition occurring for all thicknesses, the in-plane magnetoconductance exhibits an even-odd effect due to a low-field spin-flop transition. If the layer number NN is even, the transition occurs at μ0H0\mu_0 H \sim 0 T due to the very small in-plane magnetic anisotropy, whereas for odd NN the net magnetization of the uncompensated layer causes the transition to occur at finite HH. Through a quantitative analysis of the phenomena, we determine the interlayer exchange coupling as well as the staggered magnetization, and show that in CrCl3_3 shape anisotropy dominates. Our results reveal the rich behaviour of atomically-thin layered antiferromagnets with weak magnetic anisotropy.

Keywords

Cite

@article{arxiv.1911.04376,
  title  = {Determining the phase diagram of atomically thin layered antiferromagnet CrCl$_3$},
  author = {Zhe Wang and Marco Gibertini and Dumitru Dumcenco and Takashi Taniguchi and Kenji Watanabe and Enrico Giannini and Alberto F. Morpurgo},
  journal= {arXiv preprint arXiv:1911.04376},
  year   = {2020}
}

Comments

10 pages, 5 figures (supplementary information as ancillary file)