Related papers: Protective coatings for front surface silver mirro…
We report on growth of high-aspect-ratio ($\gtrsim300$) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at…
Layered manufacturing inherently suffers from staircase defects along surfaces that are gently slopped with respect to the build direction. Reducing the slice thickness improves the situation but never resolves it completely as flat layers…
We present a low-loss integrated photonics platform in the visible and near ultraviolet regime. Fully-etched waveguides based on atomic layer deposition (ALD) of aluminum oxide operate in a single transverse mode with $<$3 dB/cm propagation…
We report on the optical characterization of semicontinuous nanostructured silver films exhibiting tunable optical reflectance asymmetries. The films are obtained using a multi-step process, where a nanocrystalline silver film is first…
Functional materials with high electrical conductivity and optical transmittance are vital for thermally tunable free-space photonic systems. Conventional transparent conductors such as graphene and indium tin oxide are limited by high…
Aluminum nitride (AlN) has emerged as a leading platform for integrated photonics in the visible and ultraviolet spectral ranges, particularly for quantum information applications involving trapped atoms. However, achieving low propagation…
Gallium oxide is a wide-bandgap semiconductor which has been steadily growing in popularity due to its ultra-wide bandgap, suitability for harsh environments and distinctive opto-electrical properties. Notable applications include deep-UV…
We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bilayer graphene without inducing significant damage to the…
In this study, the characteristics of nickel thin film deposited by remote plasma atomic layer deposition (RPALD) on p-type Si substrate and formation of nickel silicide using rapid thermal annealing were determined.…
We show that direct laser writing in aqueous silver nitrate with a $\lambda$ = 1030 nm femtosecond laser results in deposition of a mixture of silver oxide and silver, in contrast to the pure silver deposition previously reported with 780…
The deposition of nano-crystalline ZnS/diamond composite protective coatings on silicon, sapphire, and ZnS substrates, as a preliminary step to coating infrared transparent ZnS substrates from powder mixtures by the aerosol deposition…
The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2-3 mm). This implies the need of slim edges of about 100-200 $\mu$m width for…
We investigate the growth conditions for thin (less than 200 nm) sputtered aluminum (Al) films. These coatings are needed for various applications, e.g. for advanced manufacturing processes in the aerospace industry or for nanostructures…
We have developed a wedge-loaded double-cantilever beam adhesion measurement set-up for thin films deposited on glass by sputtering. The test is described in details. Results on the Glass/sublayer/Ag/ZnO multilayer provide evidence that…
A process of atomic layer deposition combined with self assembled monolayers was used to investigate the possible modification of polyurethane paint surfaces. First, we used an ALD process to produce thin and uniform Al2O3 coatings of these…
Background events in the DRIFT-IId dark matter detector, mimicking potential WIMP signals, are predominantly caused by alpha decays on the central cathode in which the alpha particle is completely or partially absorbed by the cathode…
A laser ablation system has been constructed and used to determine the damage threshold of stainless steel, rhodium and single-, poly- and nanocrystalline molybdenum in vacuum, at a number of wavelengths between 220 and 1064 nm using 5 ns…
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the…
We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA…
In recent years, tremendous progress has been made on complementary metal-oxide-semiconductor (CMOS) sensors for applications as X-ray detectors. To shield the visible light in X-ray detection, a blocking filter of aluminum is commonly…