Related papers: SiC Cantilevers For Generating Uniaxial Stress

Superconducting Parametric Amplifiers (SPAs) have seen great interest in recent years due to their high gain and quantum limited noise performance. Among these amplifiers, resonant SPAs have been widely developed for experiments where ultra…

We present the first results of a high-spectral-resolution survey of the carbon-rich evolved star IRC+10216 that was carried out with the HIFI spectrometer onboard Herschel. This survey covers all HIFI bands, with a spectral range from 488…

Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can…

Silicon carbide is a hard, semiconducting material presenting many polytypes, whose behavior under extreme conditions of pressure and temperature has attracted large interest. Here we study the mechanical properties of 3C-SiC over a wide…

All quantum optomechanics experiments to date operate at cryogenic temperatures, imposing severe technical challenges and fundamental constraints. Here we present a novel design of on-chip mechanical resonators which exhibit fundamental…

A previously unexplored experimental scheme is presented for generating low-divergence, ultra-dense, relativistic, electron-positron beams using 400 GeV/c protons available at facilities such as HiRadMat and AWAKE at CERN. Preliminary…

4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-active color centers. Integrating color centers into…

Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the…

Fabrication processes involving anhydrous hydrofluoric vapor etching are developed to create high-$Q$ aluminum superconducting microwave resonators on free-standing silicon membranes formed from a silicon-on-insulator wafer. Using this…

This work reports on the fabrication and characterization of an Au/ZnO/Pt-based high-overtone bulk acoustic resonator (HBAR) on SiC substrates. We evaluate its microwave characteristics comparing with Si substrates for…

Investigations into the microwave surface impedance of superconducting resonators have led to the development of single photon counters that rely on kinetic inductance for their operation. While concurrent progress in additive…

Superconducting inductors with impedance surpassing the resistance quantum, i.e., superinductors, are important for quantum technologies because they enable the development of protected qubits, enhance coupling to systems with small…

We use Raman spectroscopy in tandem with transmission electron microscopy and DFT simulations to show that extreme (GPa) pressure converts the phase of silicon nanowires from cubic (Si-I) to hexagonal (Si-IV) while preserving the nanowire's…

We present an experimental investigation of lumped-element superconducting LC resonators designed to provide different types of coupling to a transmission line. We have designed four resonator geometries including dipole and quadrupole…

The in-plane motion of an electron on helium can couple to superconducting microwave resonators via electrical dipole coupling, offering a robust and rapid readout scheme. In previous efforts, microwave resonator designs for electrons on…

The semicylindrical microresonator with relatively simple excitation with a plane wave is studied. The resonator is formed on the base of the dielectric/metal/dielectric structure, where the wave energy penetrates into resonator through a…

Low-loss superconducting rf devices are required when used for quantum computation. Here, we present a series of measurements and simulations showing that conducting losses in the packaging of our superconducting resonator devices affect…

Silicon carbide (SiC), is an artificial semiconductor used for high-power transistors and blue LEDs, for its extraordinary properties. SiC would be attractive for more applications, but large-scale or large-surface area fabrication, with…

We report the first observation of a superconducting transition in a 3D printed, metallised-plastic device. A cylindrical cavity is 3D printed from a photosensitive polymer resin and then a 20 $\mu$m layer of tin deposited. A resonant TE…

We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal…