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While $Hf_{0.5}Zr_{0.5}O_2$ (HZO) thin films hold significant promise for modern nanoelectronic devices, a comprehensive understanding of the interplay between their polycrystalline structure and electrical properties remains elusive. Here,…

Materials Science · Physics 2025-01-10 Kévin Alhada-Lahbabi , Brice Gautier , Damien Deleruyelle , Grégoire Magagnin

Relaxor ferroelectrics are complex materials with distinct properties different from classic ferroelectrics. Probing frequency depended dielectric susceptibility is its trait. Other empirical laws build on classic ferroelectrics are still…

Materials Science · Physics 2022-09-07 Shiyi Zhang , Dongyan Zhang , Zhimin Li , Pangpang Wang , Ri-ichi Murakami

Proximity ferroelectricity is a novel paradigm for inducing ferroelectricity in a non-ferroelectric polar material such as AlN or ZnO that are typically unswitchable with an external field below their dielectric breakdown field. When placed…

Neutron and x-ray scattering studies on relaxor ferroelectric systems Pb(Zn$_{1/3}$Nb$_{2/3}$)O$_3$ (PZN), Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$ (PMN), and their solid solutions with PbTiO$_3$ (PT) have shown that inhomogeneities and disorder play…

Materials Science · Physics 2015-05-13 Guangyong Xu

Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide…

In this paper, we present a microscopic model for heterogeneous ferroelectric and an order parameter for relaxor phase. We write a Landau theory based on this model and its application to ferroelectric PbFe$_{1/2}$Ta$_{1/2}$O$_3$ (PFT) and…

Materials Science · Physics 2009-11-10 S. A. Prosandeev , I. P. Raevski , U. V. Waghmare

Environmentally benign (1-x)Ba(Ti$_{0.8}$Zr$_{0.2}$)O$_3$-x(Ba$_{0.7}$Ca$_{0.3}$)TiO$_3$ (BZT-BCT) ceramics are promising materials due to their remarkable high piezoresponse [Liu and Ren, Phys. Rev. Lett. \textbf{103}, 257602 (2009)]. In…

After the discovery of ferroelectricity in HfO$_2$ based thin films a decade ago, ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) thin films are frequently being utilized in the CMOS (Complementary Metal- Oxide Semiconductor) and logic…

Materials Science · Physics 2024-09-11 Deepak Kumar

Neutron pair distribution function analysis and first principles calculations have been employed to study short-range correlations in heavily disordered dielectric material Sr$_x$Ba$_{1-x}$Nb$_2$O$_6$ ($x=0.35, 0.5$ and 0.61). The…

Since the discovery of polar topological textures, achieving efficient control and manipulation of them has emerged as a significant challenge for their integration into nanoelectronic devices. In this study, we use second principles…

Materials Science · Physics 2025-08-01 Fernando Gómez-Ortiz , Louis Bastogne , He Xu , Philippe Ghosez

The role of defects in solids of mixed ionic-covalent bonds such as ferroelectric oxides is complex. Current understanding of defects on ferroelectric properties at the single-defect level remains mostly at the empirical level, and the…

Materials Science · Physics 2017-09-13 Shi Liu , R. E. Cohen

This review examines the conditions that lead to the formation of flexo-sensitive chiral polar structures in thin films and core-shell ferroelectric nanoparticles. It also analyzes possible mechanisms by which the flexoelectric effect…

Relaxor ferroelectric PbMg_1/3Ta_2/3O_3 ceramics and thin films were investigated by means of broad-band dielectric, time-domain terahertz (THz) and Fourier-transform infrared (IR) spectroscopy in the frequency range 100 Hz - 90 THz at…

Materials Science · Physics 2009-11-13 S. Kamba , D. Nuzhnyy , S. Veljko , V. Bovtun , J. Petzelt , Y. L. Wang , J. Levoska , M. Tyunina , J. Macutkevic , N. Setter , J. Banys

This paper provides a brief introduction to the phenomenological aspects of the polarization in ferrroelectric materials, and then an analysis of a few selected topics related to the modelling of ferroelectrics. The description of…

Emerging Technologies · Computer Science 2023-11-08 David Esseni , Francesco Driussi , Daniel Lizzit , Marco Massarotto , Mattia Segatto

Dielectric, anelastic and ^139La NMR relaxation measurements have been made on the relaxor ferroelectric Pb(1-3x/2)La(x)Zr(0.2)Ti(0.8)O(3) (PLZT) with x = 0.22. The dielectric susceptibility exihibits the frequency dispersive maximum due to…

Materials Science · Physics 2010-07-23 F. Cordero , M. Corti , F. Craciun , C. Galassi , D. Piazza , F. Tabak

The piezoelectric response is a measure of the sensitivity of a material's polarization to stress or its strain to an applied field. Using in-operando x-ray Bragg coherent diffraction imaging, we observe that topological vortices are the…

The electrical generation and detection of elastic waves are the foundation for acousto-electronic and acousto-optic systems. For surface-acoustic-wave devices, micro-/nano-electromechanical systems, and phononic crystals, tailoring the…

Mesoscale and Nanoscale Physics · Physics 2018-05-14 Lu Zheng , Hui Dong , Xiaoyu Wu , Yen-Lin Huang , Wenbo Wang , Weida Wu , Zheng Wang , Keji Lai

It is demonstrated based on continuum mechanics modeling and simulation that it is possible to obtain polycrystalline ceramic ferroelectric materials which beggars single crystals in electromechanical properties. The local inhomogeneities…

Materials Science · Physics 2010-11-15 K. P. Jayachandran , J. M. Guedes , H. C. Rodrigues

An atomistic first-principles-based effective Hamiltonian is used to investigate energy storage in Ba(Zr$_{0.5}$Ti$_{0.5}$)O$_{3}$ relaxor ferroelectrics, both in their bulk and epitaxial films' forms, for electric fields applied along…

Materials Science · Physics 2022-01-11 Zhijun Jiang , Sergey Prosandee , L. Bellaiche

Nanoscale topological polar textures promise new functionalities for ferroelectric memories and logic, yet their three-dimensional structure and mesoscale organization remain experimentally inaccessible. Here we introduce depth-resolved…