Related papers: Microscopic model of stacking-fault potential and …
Several problems in mathematical physics relating to excitons in two dimensions are considered. First, a fascinating numerical result from a theoretical treatment of screened excitons stimulates a re-evaluation of the familiar…
The artificial gauge field for electrically neutral exciton polaritons devoid from the polarization degree of freedom can be synthesized by means of applying crossed electric and magnetic fields. The appearance of the gauge potential can be…
A study of the formation of excitons as a problem of two Dirac particles in a gapped graphene layer and in two gapped graphene layers separated by a dielectric is presented. In the low energy limit the separation of the center-of-mass and…
Semiconductor quantum dots host a rich manifold of excitonic complexes, including neutral excitons that emit anti-bunched single photons and charged exciton complexes capable of producing super-bunched photons via cascade emission.…
We study anisotropies of helicity modulus, excitation spectrum, sound velocity and angle-resolved luminescence spectrum in a two-dimensional system of interacting excitons in a periodic potential. Analytical expressions for anisotropic…
An excitonic insulator phase is expected to arise from the spontaneous formation of electron-hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these…
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in…
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly…
We consider a neutral exciton localized on a model p-i-n junction defined in a two-dimensional crystal: MoSe$_2$ and phosphorene, using a variational approach to the effective mass Hamiltonian. The non-homogeneous electric field at the…
We propose a new mechanism for stabilization of confined modes in lasers and semiconductor microcavities holding exciton-polariton condensates, with spatially uniform linear gain, cubic loss, and cubic self-focusing or defocusing…
We numerically solve the electron-hole relative wave function of interlayer excitons in bilayer transition metal dichalcogenides, taking into account the screening effects from both the constituent transition metal dichalcogenides layers…
We describe exciton-polariton modes formed by the interaction between excitons in a 2D layer of a transition metal dichalcogenide embedded in a cylindrical microcavity and the microcavity photons. For this, an expression for the excitonic…
Excitons, the bosonic quasiparticle emerging from Coulomb interaction between electrons and holes, will undergo a Bose-Einstein condensation(BEC) and transition into a superfluid state with global phase coherence at low temperatures. An…
Understanding the dynamics of excitons in two dimensional semiconductors requires a theory that incorporates the essential physics distinct from their three-dimensional counterparts. In addition to the modified dielectric environment,…
We present compelling experimental evidence for a successful electrostatic trapping of two-dimensional dipolar excitons that results in stable formation of a well confined, high-density and spatially uniform dipolar exciton fluid. We show…
The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schroedinger equation. The precise results for the…
Bilayer materials may support interlayer excitons comprised of electrons in one layer and holes in the other. In experiments, a non-zero exciton density is typically sustained by a bias chemical potential, implemented either by optical…
We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are…
We investigate the nature of excitons bound to I1 basal-plane stacking faults [(I1;X)] in GaN nanowire ensembles by continuous-wave and time-resolved photoluminescence spectroscopy. Based on the linear increase of the radiative lifetime of…
Moir\'e potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However,…