Related papers: Magneto-memristive switching in a two-dimensional …
Magnetoelectric properties of a coupled spin-electron model on a doubly decorated square lattice in an external electric field applied along the crystallographic axis [11] are rigorously examined with the help of generalized…
Memristors, which are characterized by their unique input-voltage-history-dependent resistance, have garnered significant attention for the exploration of next-generation in-memory computing, reconfigurable logic circuits, and neural…
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic…
We have explored a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single crystal…
The pivotal role of magnetic anisotropy in stabilising two-dimensional (2D) magnetism has been widely accepted, however, direct correlation between magnetic anisotropy and long-range magnetic ordering in the 2D limit is yet to be explored.…
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…
Controllable multilevel resistance states are of interest for memory technologies like neuromorphic computing, but robust materials platforms toward such behavior remain limited. Here, we show that the non-centrosymmetric antiferromagnetic…
Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here Schottky…
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
Alternating current susceptibility and direct current magnetization have been studied for polycrystalline Ca$_{1-x}$Mn$_x$O. On increasing the Mn content, magnetic ordering changes from spin-glass behavior for $0.25 \leqslant x \leqslant…
Altermagnets represent a novel magnetic phase with transformative potential for ultrafast spintronics, yet efficient control of their magnetic states remains challenging. We demonstrate an ultra-low-power electric-field control of…
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…
While most neuromorphic systems are based on nanoscale electronic devices, nature relies on ions for energy-efficient information processing. Therefore, finding memristive nanofluidic devices is a milestone toward realizing electrolytic…
We study the implications of the anisotropic magnetic resistance on permalloy nanowires, and in particular on the property of the resistance depending on the type of lattice. We discuss how the internal spin configuration of artificial spin…
First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in…
There are essential achievements in synthesis of interesting for creation of compact electronic memory switched by own current structures of spin valves and magnetic tunnel junctions with hysteretic current dependences of resistance. In the…