Related papers: Wide band gap chalcogenide semiconductors
Hybrid perovskites (CH3NH3PbI3) is one of the most promising novel materials for solar harvesting. Toxicity of lead (Pb), however, has always remained a concern. We investigated the electronic structure of complete replacement of Pb by…
Various ternary chalcogenide systems and their properties are one of the hot topics for researchers nowadays. In this article, one of the ternary chalcogenide compounds, CdTl2Te4 is studied including its electronic structures and optical…
Titanium dioxide (TiO2) is a wide band gap semiconducting material which is promising for photocatalysis. Here we present first-principles calculations to study the pressure dependence of structural and electronic properties of two TiO2…
Topological insulators (TIs) have been found in strained binary HgTe and ternary I-III-VI2 chalcopyrite compounds such as CuTlSe2 which have inverted band structures. However, the non-trivial band gaps of these existing binary and ternary…
The discovery of transparent electrodes led to the development of optoelectronic devices such as OLEDs, LCDs, touchscreens, IR sensors, etc. Since ITO has many drawbacks in respect of its production cost and limited transparency in IR,…
Low-temperature thermal conductivity measurements were performed on single crystals of TlNi$_2$Se$_2$, a nickel-chalcogenide heavy-electron superconductor with $T_c$ $\simeq$ 3.7 K. In zero field, the residual electronic contribution at $T$…
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as…
In the last decade the ns$^2$ cations (e.g., Pb$^{2+}$ and Sn$^{2+}$) based halides have emerged as one of the most exciting new classes of optoelectronic materials, as exemplified by for instance hybrid perovskite solar absorbers. These…
Dielectric integration of layered semiconductors is a prerequisite for fabricating high-quality optoelectronic, valleytronic, and quantum-photonic devices. While hexagonal boron nitride (hBN) is the current benchmark dielectric, exploration…
Transparent conducting oxides (TCOs) are essential to many technologies including solar cells and transparent electronics. The search for high performance n- or p-type TCOs has mainly focused on materials offering transport through band…
Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model…
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the…
We report density-functional-theory calculations of the electronic band structures and optical absorption spectra of two-dimensional crystals of Ga$_2$X$_2$ (X=S, Se, and Te). Our calculations show that all three two-dimensional materials…
The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on…
Understanding quasiparticle band structures of transition metal dichalcogenides (TMDs) is critical for technological advances of these materials for atomic layer electronics and photonics. Although theoretical calculations to date have…
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality…
2D materials are compatible with many material platforms as they adhere to other materials strictly by van der Waals interactions. This, together with the variety of band gaps found among transition metal dichalcogenides (TMDCs), makes them…
A high-performance p-type transparent conductor (TC) does not yet exist, but could lead to advances in a wide range of optoelectronic applications and enable new architectures for, e.g., next-generation photovoltaic (PV) devices.…
Independent control of carrier density and out-of-plane displacement field is essential for accessing novel phenomena in two-dimensional material heterostructures. While this is achieved with independent top and bottom metallic gate…
PbO-type Fe chalcogenide has been drawing much attention as the Fe-based superconductor with the most simple crystal structure. Whereas FeSe is an intrinsic superconductor, FeTe, while having a structure analogous to FeSe, exhibits…