Related papers: Ultra-narrow linewidth hybrid integrated semicondu…
We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and…
Highly coherent optical sources are a key element in several fields of physics, in particular in time frequency metrology. Over the past decennia, there has been particular efforts in developing such sources to the expense of sophisticated…
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN…
Recent advances in the development of ultra-low loss silicon nitride (Si3N4)-based photonic integrated circuits have allowed integrated lasers to achieve a coherence exceeding those of fiber lasers and enabled unprecedentedly fast…
Lasers that combine narrow linewidths with rapid tunability are critical for applications such as coherent optical ranging, distributed fiber-optic sensing, and precision spectroscopy. Despite significant progress in integrated laser…
Self-injection locking scheme has the potential to narrow the linewidth of lasers in a compact setup. Here, we report a narrow linewidth laser source near 1 {\mu}m by self-injection locking scheme using a Fabry-Perot (FP) hollow resonator…
A low noise linearly frequency modulated continuous wave laser source with a wide frequency bandwidth is demonstrated. By two-dimensional thermal tuning, the laser source shows 42 GHz continuous frequency tuning with 49.86 Hz intrinsic…
High-power ultra-low noise single-mode single-frequency lasers are in great demand for interferometric metrology. Robust, compact all-fiber lasers represent one of the most promising technologies to replace the current laser sources in use…
Erbium-doped fiber lasers exhibit high coherence and low noise as required for applications in fiber optic sensing, gyroscopes, LiDAR, and optical frequency metrology. Endowing Erbium-based gain in photonic integrated circuits can provide a…
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already…
We report on the phase-locking of two diode lasers based on self-seeded tapered amplifiers. In these lasers, a reduction of linewidth is achieved using narrow-band high-transmission interference filters for frequency selection. The lasers…
The design of a 671 nm diode laser with a mode-hop-free tuning range of 40 GHz is described. This long tuning range is achieved by simultaneously ramping the external cavity length with the laser injection current. The external cavity…
Ultra-low noise lasers are essential tools in a wide variety of applications, including data communication, light detection and ranging (LiDAR), quantum computing and sensing, and optical metrology. Recent advances in integrated photonics,…
Recent advances in topological one-dimensional photonic crystal concepts have enabled the development of robust light-emitting devices by incorporating a topological interface state (TIS) at the cavity center. In this study, we…
Driven by narrow-linewidth bench-top lasers, coherent optical systems spanning optical communications, metrology and sensing provide unrivalled performance. To transfer these capabilities from the laboratory to the real world, a key missing…
We have developed external-cavity diode lasers, where the wavelength selection is assured by a low loss interference filter instead of the common diffraction grating. The filter allows a linear cavity design reducing the sensitivity of the…
We present a robust sideband laser locking technique that is ideally suited for applications requiring low probe power and heterodyne readout. By feeding back to a high-bandwidth voltage controlled oscillator, we lock a first-order…
In this study, incoherent light with a spectral linewidth of 7 nm and 140 mW of power was generated from a laser diode into which incoherent light emitted from a superluminescent diode was injected with 2.7 mW of power. The spectral…
A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…