Related papers: Ultra-narrow linewidth hybrid integrated semicondu…
We have characterized a semiconductor amplifier laser system which provides up to 200mW output after a single-mode optical fiber at 780nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of…
The integration density of photonic integrated circuits has been limited by light coupling between waveguides. Traditional approaches to layout the waveguide with high density are based on refractive index engineering to suppress the light…
Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs) which can fulfill the…
The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse…
The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and…
We report the generation of narrow-linewidth 637.2 nm laser by single-pass sum-frequency generation (SFG) of two infrared lasers at 1560.5 nm and 1076.9 nm in PPMgO:LN crystal. Over 8.75 W of single-frequency continuously tunable 637.2 nm…
Superluminescent diodes are promising devices for applications in which low coherence, high efficiency, small foot-print and good optoelectronic integration are required. Blue emitting superluminescent diodes with good performances and easy…
We report ultra-stable locking of a commercially available extended cavity diode laser to a vibration-insensitive high finesse Fabry-Perot cavity. A servo bandwidth of 2 MHz is demonstrated. The absolute stability of the diode laser after…
We report on a narrow linewidth laser diode system that is stabilized using both optical and electronic feedback to a spectral hole in cryogenic Tm:YAG. The laser system exhibits very low phase noise. The spectrum of the beat signal between…
Two cw single-mode violet (397nm) diode lasers are locked to a single external-cavity master diode laser by optical injection locking. A double-pass 1.6GHz acousto-optic modulator is used to provide a 3.2GHz offset frequency between the two…
Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise…
We present a scheme to phase-lock a 240 mW, 852 nm distributed Bragg reflector (DBR) laser to a fixed-frequency narrow-linewidth laser with a rapidly tunable frequency offset near 9 GHz. The phase-lock is accomplished by electronic feedback…
We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic…
Recent advances in three-dimensional laser writing have enabled direct nanostructuring deep within silicon, unlocking a volumetric design space previously inaccessible to surface-bound nanophotonic devices. Here, we introduce subwavelength…
We design and demonstrate a monolithically integrated silicon photonic multichannel optical hybrid for versatile broadband coherent reception, addressing the critical limitations of current wavelength multiplexed systems in scalability and…
A source of ultrashort pulses of light in the 2 {\mu}m region was constructed using supercontinuum broadening from an erbium mode-locked laser. The output spectrum spanned 1000 nm to 2200 nm with an average power of 250 mW. A pulse width of…
The design of highly wavelength tunable semiconductor laser structures is presented. The system is based on a one dimensional photonic crystal cavity consisting of two patterned, doubly-clamped nanobeams, otherwise known as a "zipper"…
Tunable mid-infrared lasers are essential for optical sensing and imaging. Existing technologies, however, face challenges in simultaneously achieving broadband spectral tunability and ultra-rapid scan rates, limiting their utility in…
Semiconductor lasers with ultra-low thresholds and minimal footprints are a topic of active research. Such devices require a combination of high quality factor laser cavities with small active region volumes, which drives the quest for…
We present a novel scheme for hybrid integration of quantum cascade laser bars with germanium-on-silicon waveguides operating in the mid-infrared. The laser bars are flip-chip bonded onto a germanium-on-silicon target chip without active…