Related papers: Gate field effects on the topological insulator Bi…
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently…
A theory of combined interference and interaction effects on the diffusive transport properties of 3D topological insulator surface states is developed. We focus on a slab geometry (characteristic for most experiments) and show that…
Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to…
Strongly correlated analogues of topological insulators have been explored in systems with purely on-site symmetries, such as time-reversal or charge conservation. Here, we use recently developed tensor network tools to study a quantum…
We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…
Van der Waals heterostructures have been used to tailor atomic layers into various artificial materials through interactions at heterointerfaces. The interplay between the band gap created by the band folding of the interfacial potential…
Phase- and voltage bias-sensitive quasiparticle transport at a double $NIS_1IS_2$ interface is considered. The barriers $I$ range from tunnel to transparent, and the intermediate region $S_1$ has a width comparable to the superconducting…
The compound Bi14Rh3I9 consists of ionic stacks of intermetallic [(Bi4Rh)3I]2+ and insulating [Bi2I8]2- layers and has been identified to be a weak topological insulator. Scanning tunneling microscopy revealed the robust edge states at all…
We propose the existence of a substantial charge current parallel to the interface between a noncentrosymmetric superconductor and a metallic ferromagnet. Our analysis focuses upon two complementary orbital-angular-momentum pairing states…
Recently it was demonstrated that Sr intercalation provides a new route to induce superconductivity in the topological insulator Bi$_2$Se$_3$. Topological superconductors are predicted to be unconventional, with mixed even and odd parity…
We report on microscopic tight-binding modeling of surface states in Bi$_2$Se$_3$ three-dimensional topological insulator, based on a sp$^3$ Slater-Koster Hamiltonian, with parameters calculated from density functional theory. The effect of…
Topological materials hosting metallic edges characterized by integer quantized conductivity in an insulating bulk have revolutionized our understanding of transport in matter. The topological protection of these edge states is based on…
Some topological insulators become superconducting when doped with Cu and Pd. Superconductivity in a non-superconductor may be induced by proximity effect: i.e. Contacting a non-superconductor with a superconductor. The superconducting…
The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nano-electronics. With the exception of LaAlO$_3$/SrTiO$_3$ interfaces, experiments on gate-induced superconductors…
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…
We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM…
The temperature dependence of the complex optical properties of the three-dimensional topological insulator Bi2Te2Se is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room…
Nearly a decade after the discovery of topological insulators (TIs), the important task of identifying and characterizing their topological surface states through electrical transport experiments remains incomplete. The interpretation of…
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of…
Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining…