Related papers: A Movable Valley Switch Driven by Berry Phase in B…
Control over minivalley polarization and interlayer coupling is demonstrated in double bilayer graphene twisted with an angle of 2.37$^\circ$. This intermediate angle is small enough for the minibands to form and large enough such that the…
Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arrangement hosts correlated and topological electronic phases,…
Electron bands in the untwisted bilayer graphene flatten out in a transverse electric field, offering a promising platform for correlated electron physics. We predict that the spin/valley isospin magnetism, resembling that seen in moir\'{e}…
The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer…
Recently, the topological flat bands and spin Hall effect have been experimentally observed in the AB-stacked MoTe$_2$/WSe$_2$ heterostructures. In this work, we systematically study the Berry curvature effects in moir\'{e} transition metal…
We present a study of the nonlinear optical response of twisted bilayer graphene. We discuss the contribution of the Berry phase to the non-linearity when inversion symmetry is broken, thus underlining the interplay between band and real…
The Moebius strip, as a fascinating loop structure with one-sided topology, provides a rich playground for manipulating the non-trivial topological behavior of spinning particles, such as electrons, polaritons, and photons in both real and…
Twisted bilayer graphene aligned with hexagonal boron nitride (TBG/hBN) hosts rich topological and correlated quantum phases, such as (fractional) Chern insulators, whose character is dictated by the topology of the moir\'{e} flat band.…
We investigate interaction-induced valley domain walls in bilayer graphene in the $\nu=0$ quantum Hall state, subject to a perpendicular electric field that is antisymmetric across a line in the sample. Such a state can be realized in a…
Klein tunneling in gapless bilayer graphene, perfect reflection of electrons injecting normal to a pn junction, is expected to disappear in the presence of energy band gap induced by external gates. We theoretically show that the Klein…
We demonstrate theoretically that the topology of energy bands and Fermi surface in bilayer graphene undergoes a very sensitive transition when extremely tiny lateral interlayer shift occurs in arbitrary directions. The phenomenon…
Single-layer and Bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures and valley degrees of freedom. The ground states and excitations in the integer and fractional quantum Hall regimes…
Electronic localization is numerically studied in disordered bilayer graphene with an electric-field induced energy gap. Bilayer graphene is a zero-gap semiconductor, in which an energy gap can be opened and controlled by an external…
The surprising insulating and superconducting states of narrow-band graphene twisted bilayers have been mostly discussed so far in terms of strong electron correlation, with little or no attention to phonons and electron-phonon effects. We…
We propose that the electronic structure of twisted bilayer graphene (TBG) can be understood as Dirac fermions coupled with opposite pseudo magnetic fields generated by the moir\'e pattern. The two low-energy flat bands from each monolayer…
Symmetry breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the…
Graphene has evolved as a platform for quantum transport that can compete with the best and cleanest semiconductor systems. Recently, many interesting local properties of carrier transport in graphene have been investigated by various…
Graphene's outstanding mechanical properties lend to strain engineering, allowing for future valleytronics and nanoelectromechanic applications. In this work, we have found that a Gaussian-shaped strain on a graphene p-n junction results in…
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely…
The control and manipulation of the valley and spin degrees of freedom have received great interests in fundamental studies and advanced information technologies. Compared with magnetic means, it is highly desirable to realize more…