Related papers: Improvement in Retention Time of Capacitorless DRA…

In this paper, we present a new 9T SRAM cell that has good write-ability and improves read stability at the same time. Simulation results show that the proposed design increases Read SNM (RSNM) and Ion/Ioff of read path by 219% and 113%,…

Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the…

Byte-addressable persistent memory (PM) brings hash tables the potential of low latency, cheap persistence and instant recovery. The recent advent of Intel Optane DC Persistent Memory Modules (DCPMM) further accelerates this trend. Many new…

Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…

Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed…

The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with…

Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of…

Serving LLMs requires substantial memory due to the storage requirements of Key-Value (KV) embeddings in the KV cache, which grows with sequence length. An effective approach to compress KV cache is quantization. However, traditional…

A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives…

Tabular data streams are increasingly prevalent in real-time decision-making across healthcare, finance, and the Internet of Things, often generated and processed on resource-constrained edge and mobile devices. Continual learning (CL)…

This paper summarizes the idea of Tiered-Latency DRAM, which was published in HPCA 2013. The key goal of TL-DRAM is to provide low DRAM latency at low cost, a critical problem in modern memory systems. To this end, TL-DRAM introduces…

Ternary logic system is the most promising and pursued alternate to the prevailing binary logic systems due to the energy efficiency of circuits following reduced circuit complexity and chip area. In this paper, we have proposed a ternary…

State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…

The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…

Magnetic Tunnel Junction (MTJ) based Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is poised to replace embedded Flash for advanced applications such as automotive microcontroller units. To achieve deeper technological…

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has multiple resistance states along with excellent endurance and…

3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these…

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…