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Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…
Previous studies have demonstrated spin-orbit torque (SOT) switching of Mn3Sn where the spin polarization lies in the kagome plane (configuration I). However, the critical current density ($ J_{crit}$) is unrealistically large ($…
Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…
Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…
This letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results…
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical…
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and…
Nanomagnets with small shape anisotropy energy barriers on the order of the thermal energy have unstable magnetization that fluctuates randomly in time. They have recently emerged as promising hardware platforms for stochastic computing and…
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…
Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to…
We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate…
Magnetic switch with perpendicular magnetic anisotropy (PMA) is a promising method for controlling magnetization in several applications like magnetic tunnel junction and magnetic memory. However, incoherence happens during the switch…
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to…
The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and…
A nano-scale reconfigurable magnonic crystal is designed using voltage-controlled perpendicular magnetic anisotropy (PMA) in ferromagnetic-dielectric hetero-structures. A periodic array of gate metallic stripes is placed on top of a MgO/Co…
Tunable synthetic spin-orbit coupling (s-SOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconductor quantum dots. Here we experimentally demonstrate…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…