Related papers: 4f Conduction in the Magnetic Semiconductor NdN
Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the ferromagnetic Mn-rich inclusions and the magnetotransport…
Simultaneous occurrence of the Mott and band gap in correlated semiconductors results in a complex optical response with the nature of the absorption edge difficult to resolve both experimentally and theoretically. Here, we combine a…
Reading antiferromagnetic order remains a central obstacle for antiferromagnetic memory and logic because zero net magnetisation precludes conventional magnetic readout. Domain imaging typically relies on x-ray magnetic linear dichroism…
We study the carrier transport and magnetic properties of group-IV-based ferromagnetic semiconductor Ge1-xFex thin films (Fe concentration x = 2.3 - 14 %) with and without boron (B) doping, by measuring their transport characteristics; the…
A major challenge for the next generation of spintronics devices is the implementation of ferromagnetic-semiconductor thin films as spin injectors and detectors. Spin-polarised carrier injection cannot be accomplished efficiently from…
Using first-principles calculations, we predict a Chern insulating phase in thin films of the ferromagnetic semi-metal GdN. In contrast to previously proposed Chern insulator candidates, which mostly rely on honeycomb lattices, this system…
The inverse spinel ferrimagnetic NiCo$_2$O$_4$ possesses high magnetic Curie temperature $T_C$, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic…
We analyze the influence of the Fermi surface (FS) shape on magnetotransport properties, particularly on the Hall effect in the MnAs compound. It has been observed in MnAs films evidence of opposite conduction polarities for different…
We systemically investigate the nature of Ce 4f electrons in structurally layered heavy-fermion compounds CcmMnIn3m+2n (with M =Co, Rh, Ir, and Pt, m=l, 2, n=0 - 2), at low temperature using on-resonance angle-resolved photoemission…
We present a theory of the infrared conductivity and absorption coefficients of metallic (III,Mn)V ferromagnetic semiconductors. We find that the conductivity is dominated by inter-valence-band transitions that produce peaks at $\hbar…
We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III-V host, which can result in carrier mediated ferromagnetism in these…
Emergence of ferromagnetism in non-magnetic semiconductors is strongly desirable, especially in topological materials thanks to the possibility to achieve quantum anomalous Hall effect. Based on first-principles calculations, we propose…
In the series R2PdSi3, Nd2PdSi3 is an anomalous compound in the sense that it exhibits ferromagnetic order unlike other members in this family. The magnetic ordering temperature is also unusually high compared to the expected value for a…
In this paper we theoretically predict a distinct class of anomalous Hall effects occurring in metallic collinear antiferromagnets. The effect is quadratic and $d-$wave symmetric in external magnetic field. In addition, the electric…
The anomalous Hall and Nernst effects describe the voltage drop perpendicular to an applied current and temperature gradient due to the magnetization of a magnetic material. These effects can be utilized to measure the Berry curvature at…
In most conductors current flow perpendicular to electric field direction (Hall current) can be explained in terms of the Lorentz forces present when charged particles flow in an external magnetic field. However, as established in the very…
We have measured the magnetotransport properties and Hall effect of a series of epitaxial NbN films grown on (100) oriented single crystalline MgO substrate under different conditions using reactive magnetron sputtering. Hall effect…
We explain effective charge anomalies recently observed for fractional quantum Hall edge states at $\nu=5/2$ [M. Dolev, Y. Gross, Y. C. Chung, M. Heiblum, V. Umansky, and D. Mahalu, Phys.Rev. B. \textbf{81}, 161303(R) (2010)]. The…
The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a biaxially-strained inverse Heusler structure, controls the ferrimagnetism that determines their magnetic and electronic properties. An extensive study of…
We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $\delta$-layer of Mn, where the charge carriers are confined within a quantum well and…