Related papers: Twin Domain Structure in Magnetically Doped Topolo…
We explore the scattering of Dirac electrons in a double-gated topological insulator in the presence of magnetic proximity effects and warped surface states. It is found that a magnetic field can shift the Dirac cone in momentum space and…
MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only…
Introducing magnetism into topological insulators breaks time-reversal symmetry, and the magnetic exchange interaction can open a gap in the otherwise gapless topological surface states. This allows various novel topological quantum states…
Magnetic topological insulators and their heterostructures provide great opportunities in coupling band topology with nontrivial spin configuration for enhanced spintronic device performance as well as designing totally new magnetoelectric…
The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality.…
Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work,…
Motivated by the study of stacking faults in weak topological insulators and the observation of magnetic domain walls in MnBi$_{2n}$Te$_{3n+1}$, we explore the topological properties of magnetic domain walls in antiferromagnetic topological…
The \emph{p}-type Bi$_{2}$Se$_{3}$ is much desirable as a promising thermoelectric material and topological insulator, while the naturally grown Bi$_{2}$Se$_{3}$ is always \emph{n}-type doped by native point defects. Here we use…
We have used density functional theory to study the energetics and electronic structure of aluminium dopants in crystalline silicon. We present data regarding the atomic and electronic structure and properties of pairs of substitutional…
Topological insulators are characterized by the existence of band inversion and the possibility of the realization of surface states. Doping with a magnetic atom, which is a source of the time-reversal symmetry breaking, can lead to…
We show that a spontaneous strain and spontaneous magnetization can arise in the doped topological insulators with a two-component superconducting vector order parameter. The details of the effects crucially depend on the symmetry of the…
We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for…
We theoretically study the electronic structure and spin properties of one-dimensional nanostructures of the prototypical bulk topological insulator Bi$_2$Se$_3$. Realistic models of experimentally observed Bi$_2$Se$_3$ nanowires and…
A magnetoconductivity formula is presented for the surface states of a magnetically doped topological insulator. It reveals a competing effect of weak localization and weak antilocalization in quantum transport when an energy gap is opened…
The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites,…
Gas molecule doping on the topological insulator Bi2 Se3 surface with existing Se vacancies is investigated using first-principles calculations. Consistent with experiments, NO2 and O2 are found to occupy the Se vacancy sites, remove…
Competing ground states may lead to topologically constrained excitations such as domain walls or quasiparticles, which govern metastable states and their dynamics. Domain walls and more exotic topological excitations are well studied in…
The topological magnetoelectric effect (TME) is a unique macroscopic manifestation of quantum states of matter possessing topological order and it is described by axion electrodynamics. In three-dimensional topological insulators, for…
We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated…
Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating…