Related papers: A novel compound synapse using probabilistic spin-…

In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive…

The discovery of spin torque transfer (STT) has lead to a significant advance in the development of spintronic devices. Novel structures and materials have been studied in order to improve the performance of the magnetic tunnel junctions…

We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of…

We propose an analog implementation of the transcendental activation function leveraging two spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and a CMOS inverter. The proposed analog neuron circuit consumes 1.8-27x…

Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…

This project explores the use of non-volatile synapses in neuromorphic computing for pattern recognition tasks through a comprehensive simulation-based approach. The main approach is through spintronic synapses, which leverage the…

Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The…

Graphical probabilistic circuit models of stochastic computing are more powerful than the predominant deep learning models, but also have more demanding requirements. For example, they require "programmable stochasticity", e.g. generating…

Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven…

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…

We demonstrate single shot al optical switching (AOS) in rare earth free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin transfer torque magnetic random access memory (STT MRAM). By tuning the capping…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…

Artificial modulation of a neuronal subset through ion channels activation can initiate firing patterns of an entire neural circuit in vivo. As nanovalves in the cell membrane, voltage-gated ion channels can be artificially controlled by…

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…

Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin-orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To…

The computing wall and data movement challenges of deep neural networks (DNNs) have exposed the limitations of conventional CMOS-based DNN accelerators. Furthermore, the deep structure and large model size will make DNNs prohibitive to…

Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to…

We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages…

This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little…