Related papers: Storage Class Memory: Principles, Problems, and Po…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state…

With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a few factors of DRAM. Nevertheless, the latency-sensitive nature…

We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

AI clusters today are one of the major uses of High Bandwidth Memory (HBM). However, HBM is suboptimal for AI workloads for several reasons. Analysis shows HBM is overprovisioned on write performance, but underprovisioned on density and…

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…

In this paper, we present a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STTRAM) that can dynamically adapt the set capacity and associativity to use efficiently the full potential of MLC STTRAM. We exploit the…

In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…

Emerging Persistent Memory technologies (also PM, Non-Volatile DIMMs, Storage Class Memory or SCM) hold tremendous promise for accelerating popular data-management applications like in-memory databases. However, programmers now need to deal…

Persistent Memory (PM) is non-volatile byte-addressable memory that offers read and write latencies in the order of magnitude smaller than flash storage, such as SSDs. This survey discusses how file systems address the most prominent…

We present SCM (Sleep-Consolidated Memory), a research preview of a memory architecture for large language models that draws on neuroscientific principles to address a fundamental limitation in current systems: the absence of persistent,…

Scalable persistent memory (PM) has opened up new opportunities for building indexes that operate and persist data directly on the memory bus, potentially enabling instant recovery, low latency and high throughput. When real PM hardware…

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…

Various constraints of Static Random Access Memory (SRAM) are leading to consider new memory technologies as candidates for building on-chip shared last-level caches (SLLCs). Spin-Transfer Torque RAM (STT-RAM) is currently postulated as the…

Both SRAM and DRAM have stopped scaling: there is no technical roadmap to reduce their cost (per byte/GB). As a result, memory now dominates system cost. This paper argues for a paradigm shift from today's simple memory hierarchy toward…

LSTMs and GRUs are the most common recurrent neural network architectures used to solve temporal sequence problems. The two architectures have differing data flows dealing with a common component called the cell state (also referred to as…

SRAM-based cache memory faces several scalability limitations in deep nanoscale technologies, e.g., high leakage current, low cell stability, and low density. Emerging Non-Volatile Memory (NVM) technologies have received lots of attention…

Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is…

Speculation is provided on how infrastructure choices fit into the materials data ecosystem. Special attention is paid to object storage, the Intel DAOS API, storage-class memory (SCM), and the prospect of non-von Neumann computing. Lastly,…