Related papers: Storage Class Memory: Principles, Problems, and Po…

In this paper, we propose a novel memory-centric scheme based on CMOS SRAM for acceleration of data intensive applications. Our proposal aims at dynamically increasing the on-chip memory storage capacity of SRAM arrays on-demand. The…

Phase Change Memory (PCM) is an attractive candidate for main memory as it offers non-volatility and zero leakage power, while providing higher cell densities, longer data retention time, and higher capacity scaling compared to DRAM. In…

The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…

The advent of CPU-attached persistent memory technology, such as Intel's Optane Persistent Memory Modules (PMM), has brought with it new opportunities for storage. In 2018, IBM Research Almaden began investigating and developing a new…

The Long Short-Term Memory (LSTM) layer is an important advancement in the field of neural networks and machine learning, allowing for effective training and impressive inference performance. LSTM-based neural networks have been…

As conventional technology scaling approaches physical and power limitations, modern computing systems increasingly face performance bottlenecks arising from memory latency, energy consumption, scalability constraints, and data movement…

In the last decade, key-value data storage systems have gained significantly more interest from academia and industry. These systems face numerous challenges concerning storage space- and read optimization. There exists a large potential…

This paper presents a tutorial and review of SRAM-based Compute-in-Memory (CIM) circuits, with a focus on both Digital CIM (DCIM) and Analog CIM (ACIM) implementations. We explore the fundamental concepts, architectures, and operational…

Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data…

The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…

With the imminent slowing down of DRAM scaling, Phase Change Memory (PCM) is emerging as a lead alternative for main memory technology. While PCM achieves low energy due to various technology-specific advantages, PCM is significantly slower…

As the demand for efficient, low-power computing in embedded and edge devices grows, traditional computing methods are becoming less effective for handling complex tasks. Stochastic computing (SC) offers a promising alternative by…

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable…

We propose overcoming the memory capacity limitation of GPUs with high-capacity Storage-Class Memory (SCM) and DRAM cache. By significantly increasing the memory capacity with SCM, the GPU can capture a larger fraction of the memory…

Computing has a huge memory problem. The memory system, consisting of multiple technologies at different levels, is responsible for most of the energy consumption, performance bottlenecks, robustness problems, monetary cost, and hardware…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

Long Short-Term Memory (LSTM) is one of the most widely used recurrent structures in sequence modeling. It aims to use gates to control information flow (e.g., whether to skip some information or not) in the recurrent computations, although…

Continual Learning (CL) is an emerging machine learning paradigm that aims to learn from a continuous stream of tasks without forgetting knowledge learned from the previous tasks. To avoid performance decrease caused by forgetting, prior…

Last level caches (LLCs) occupy a large chip-area and there size is expected to grow further to offset the limitations of memory bandwidth and speed. Due to high leakage consumption of SRAM device, caches designed with SRAM consume large…

Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This…