Related papers: Narrow optical linewidths in erbium implanted in T…
Rare-earth ion doped crystals are state-of-the-art platforms for processing quantum information, particularly thanks to their excellent optical and spin coherence properties at cryogenic temperatures. Experimental observations have shown…
Erbium ions (Er3+) provide a telecom-band optical transition with strong magnetic-dipole character, making them attractive for quantum communication and spin-photon interfaces. Identifying host environments that combine low decoherence with…
The possibility of using mixed crystals highly doped with rare earth ions (REIs) as physical systems for creating fast quantum computers with a sampling time of nanoseconds is discussed. The electronic 4f states of rare earth ions with…
Erbium ($\text{Er}^{3+}$) emitters are relevant for optical applications due to their narrow emission line directly in the telecom C-band due to the ${}^\text{4}\text{I}_{\text{13/2}}$ $\rightarrow$ ${}^\text{4}\text{I}_{\text{15/2}}$…
Conventional approaches to light-matter interactions rely on engineering photonic density of states. More recently, tailoring the spatial geometry of atoms or emitters themselves has emerged as a powerful and complementary route to control…
The inhomogeneity of an electron spin ensemble as well as fluctuating environment acting upon individual spins drastically shorten the spin coherence time $T_2$ and hinder coherent spin manipulation. We show that this problem can be solved…
The ability to coherently control and read out qubits with long coherence times in a scalable system is a crucial requirement for any quantum processor. Nuclear spins in the solid state have shown great promise as long-lived qubits. Control…
Doping of substrates at desired locations is a key technology for spin-based quantum memory devices. Focused ion beam implantation is well-suited for this task due to its high spacial resolution. In this work, we investigate ion-beam…
Perovskite oxides are promising for energy and quantum technologies, but wide-gap hosts such as NaAlO3 suffer from deep-UV absorption and limited carrier transport. Using first-principles GGA+U+SOC calculations, we investigate Eu3+-, Gd3+-,…
We describe a method for creating small quantum processors in a crystal stoichiometric in an optically active rare earth ion. The crystal is doped with another rare earth, creating an ensemble of identical clusters of surrounding ions,…
We have investigated the effects of low-energy ion beam irradiations using argon clusters on the chemical and electronic properties of LaAlO3/SrTiO3 (LAO/STO) heterointerfaces by combining X-ray photoelectron spectroscopy (XPS) and…
In many important situations the dominant dephasing mechanism in cryogenic rare-earth-ion doped systems is due to magnetic field fluctuations from spins in the host crystal. Operating at a magnetic field where a transition has a zero…
Manipulating electronic orbital states in quantum materials provides a powerful means to control their physical properties and technological functionality. Here, we demonstrate that orbital populations in strongly correlated oxide thin…
Solid-state spin defects are a promising platform for quantum networks. A key requirement is to combine long ground-state spin-coherence times with a coherent optical transition for spin-photon entanglement. Here, we investigate the spin…
Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible…
Quantum state lifetimes $T_2$, or equivalently homogeneous linewidths $\Gamma_h = 1/\pi T_2$, are a key parameter for understanding decoherence processes in quantum systems and assessing their potential for applications in quantum…
Ir-based materials have drawn much attention due to the observation of insulating phase believed to be driven by spin-orbit coupling while Ir 5$d$ states are expected to be weakly correlated due to their large orbital extensions. IrO$_2$, a…
Due to inhomogeneous broadening, the absorption lines of rare-earth-ion dopands in crystals are many order of magnitudes wider than the homogeneous linewidths. Several ways have been proposed to use ions with different inhomogeneous shifts…
Optically addressable spin defects in wide-bandage semiconductors as promising systems for quantum information and sensing applications have attracted more and more attention recently. Spin defects in two-dimensional materials are supposed…
The hyperfine structure of the ground state of erbium doped yttrium orthosilicate is analyzed with the use of electron paramagnetic resonance experiments in a tunable microwave resonator. This work was prompted by the disagreement between…