Doping of substrates at desired locations is a key technology for spin-based quantum memory devices. Focused ion beam implantation is well-suited for this task due to its high spacial resolution. In this work, we investigate ion-beam implanted erbium ensembles in Yttrium Orthosilicate crystals by means of confocal photoluminescence spectroscopy. The sample temperature and the post-implantation annealing step strongly reverberate in the properties of the implanted ions. We find that hot implantation leads to a higher activation rate of the ions. At high enough fluences, the relation between the fluence and final concentration of ions becomes non-linear. Two models are developed explaining the observed behaviour.
@article{arxiv.1509.05185,
title = {Nanoscale nonlinear effects in Erbium-implanted Yttrium Orthosilicate},
author = {Nadezhda Kukharchyk and Stepan Shvarkov and Sebastian Probst and Kangwei Xia and Hans-Werner Becker and Shovon Pal and Sergej Markmann and Roman Kolesov and Petr Siyushev and Jörg Wrachtrup and Arne Ludwig and Alexey V. Ustinov and Andreas D. Wieck and Pavel Bushev},
journal= {arXiv preprint arXiv:1509.05185},
year = {2016}
}