Related papers: Nanoscale nonlinear effects in Erbium-implanted Yt…
Erbium doped low symmetry Y$_2$SiO$_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping…
Erbium dopants in crystals exhibit highly coherent optical transitions well suited for solid-state optical quantum memories operating in the telecom band. Here we demonstrate coupling of erbium dopant ions in yttrium orthosilicate to a…
This study presents a method for deterministic Er3+ doping of x-cut TFLN using focused ion beam (FIB) implantation with sub-100 nm spatial precision, enabling seamless integration of active rare-earth ions into this technologically relevant…
Creating dense and shallow nitrogen vacancy (NV) ensembles with good spin properties, is a prerequisite for developing diamond-based quantum sensors exhibiting better performance. Ion implantation is a key enabling tool for precisely…
As an active material with favorable linear and nonlinear optical properties, thin-film lithium niobate has demonstrated its potential in integrated photonics. Integration with rare-earth ions, which are promising candidates for quantum…
Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of…
We present a new YAuSi Liquid Metal Alloy Ion Source (LMAIS), generating focused ion beams of yttrium ions, and its prospective applications for nanofabrication, sample preparation, lithographic and implantation processes. Working…
We demonstrate an optical unstable phase for a laser driven erbium ion ensemble. The transmitted light through an erbium-doped yttrium orthosillicate crystal becomes dynamically unstable when illuminated by a strong continuous-wave laser.…
The focused helium ion beam microscope is a versatile imaging and nanofabrication instrument enabling direct-write lithography with sub-10-nm resolution. Subsurface damage and swelling of substrates due to helium ion implantation is…
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is…
Numerous bulk crystalline materials exhibit attractive nonlinear and luminescent properties for classical and quantum optical applications. A chip-scale platform for high quality factor optical nanocavities in these materials will enable…
The realization of a scalable architecture for quantum information processing is a major challenge for quantum science. A promising approach is based on emitters in nanostructures that are coupled by light. Here, we show that erbium dopants…
We study $V_{\mathrm{B}}^-$ centres generated by helium focused ion beam (FIB) irradiation in thin ($\sim$70 nm) hBN nanoflakes, in order to investigate the effect of implantation conditions on the key parameters that influence the magnetic…
A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local…
We report on hybrid circuit QED experiments with focused ion beam implanted Er$^{3+}$ ions in Y$_2$SiO$_5$ coupled to an array of superconducting lumped element microwave resonators. The Y$_2$SiO$_5$ crystal is divided into several areas…
Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a…
We report microwave to optical upconversion in isotopically purified erbium-doped yttrium orthosilicate in a Fabry-P\'erot resonator at millikelvin temperatures. This follows on from investigations made at higher temperatures and with…
Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of…
Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the isotope…
Focused ion beam irradiation of metastable Fe$_{78}$Ni$_{22}$ thin films grown on Cu(100) substrates is used to create ferromagnetic, body-centered-cubic patterns embedded into paramagnetic, face-centered-cubic surrounding. The structural…