Related papers: Tunable perpendicular exchange bias in oxide heter…
We report studies of exchange bias and coercivity in ferromagnetic Ni$_{81}$Fe$_{19}$ layers coupled to antiferromagnetic (AF) (0001), (11$\bar{2}$0), and (11$\bar{0}$2) $\alpha$-Fe$_2$O$_3$ layers. We show that AF spin configurations which…
Manipulating magnetic anisotropy (MA) purposefully in transition metal oxides (TMOs) enables the development of oxide-based spintronic devices with practical applications. Here, we report a pathway to reversibly switch the lateral magnetic…
We investigated the effect of an electric field on the interface magnetic anisotropy of a thin MgO/Fe/MgO layer using density functional theory. The perpendicular magnetic anisotropy energy (MAE) increases not only under electron depletion…
Rare earth/transition metal (RE/TM) multilayers with perpendicular magnetic anisotropy are key ingredients for the development of spintronic applications. Their compensation temperature depends on the ratio of the thicknesses of rare earth…
In epitaxial (111) oriented Ni$_{80}$Fe$_{20}$/Fe$_{50}$Mn$_{50}$ bilayers, we separate two distinct behaviors: unidirectional anisotropy (exchange bias) in thick Fe$_{50}$Mn$_{50}$, and enhanced coercivity in thin Fe$_{50}$Mn$_{50}$. By…
The exchange bias (EB) effect, pivotal in magnetic data storage and sensing devices, has been observed not only in interfacial regions but also in intrinsic ferromagnetic materials. Here, we've uncovered a robust and stable exchange bias…
The magnetization reversal in stripe-like exchange bias patterned $\rm Ni_{81}Fe_{19}/IrMn$ thin films was investigated by complementary inductive and high resolution magneto optical magnetometry, magneto optical Kerr microscopy, and…
We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer,…
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
The inverse spinel ferrimagnetic NiCo$_2$O$_4$ possesses high magnetic Curie temperature $T_C$, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic…
In this work, we demonstrate a massive intrinsic exchange bias (3 kOe) in epitaxial CoFe2O4(111) thin films deposited on Al2O3(0001) substrates. This exchange bias is indicative of intrinsic exchange or a ferromagnetic material combined…
Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this…
Pronounced anisotropy of magnetic properties and complex magnetic order of a new oxi-halide compound Co7(TeO3)4Br6 has been investigated by powder and single crystal neutron diffraction, magnetization and ac susceptibility techniques.…
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet…
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in…
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…
Perpendicular exchange bias has been manipulated by changing ferromagnetic film thickness and spacer layer in Pt/Co/(Pt, Cr)/CoO thin films. The exchange bias characteristics, blocking temperature, magnetization of thin films strongly…
The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of…
Magnetization relaxation of exchange biased (Pt/Co)5/Pt/IrMn multilayers with perpendicular anisotropy was investigated by time-resolved Kerr microscopy. Magnetization reversal occurs by nucleation and domain wall propagation for both…