Related papers: Single-Particle-Picture Breakdown in laterally wea…
The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a…
We present a self-consistent Schroedinger-Poisson scheme for simulation of electrostatic quantum dots defined in gated two-dimensional electron gas formed at n-AlGaAs/GaAs heterojunction. The computational method is applied to a…
Mostly, optical spectroscopies are used to investigate the physics of excitons, whereas their electrical evidences are hardly explored. Here, we examined a forward bias activated differential capacitance response of GaInP-AlGaInP based…
Spontaneous emission from excitonic transitions in InAs/GaAs quantum dots embedded in photonic crystal waveguides at 5K into non-guided and guided modes is determined by direct hyperspectral imaging. This enables measurement of the absolute…
The critical filling factor v_c where Shubnikov-de Haas oscillations become spin split is investigated for a set of GaAs-GaAlAs heterojunctions. Finite temperature magnetoresistance measurements are used to extract the value of v_c at zero…
We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots…
In contrast to interband excitons in undoped quantum wells, doped quantum wells do not display sharp resonances due to excitonic bound states. In these systems the effective Coulomb interaction between electrons and holes typically only…
We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy.…
We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes…
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However,…
We report the optical spectroscopic results of a single self-assembled InAlAs/Al GaAs quantum dot. The polarization-dependent shift of the Zeeman splitting in a single InAlAs QD has been observed. The induced Overhauser field is estimated…
g-factor tuning of electrons in quantum dots is studied as function of in-plane and perpendicular magnetic fields for different confinements. Rashba and Dresselhaus effects are considered, and comparison is made between wide- and narrow-gap…
Using atomistic pseudopotential and configuration-interaction many-body calculations, we predict a metal-nonmetal transition and an excitonic ground state in the InAs/InSb quantum dot (QD) system. For large dots, the conduction band minimum…
We theoretically study the polarization entanglement of photons generated by the biexciton cascade in a GaAs/InAs semiconductor quantum dot (QD), located in a nano cavity. A detailed analysis of the complex interplay between photon- and…
Planar photonic nanostructures have recently attracted a great deal of attention for quantum optics applications. In this article, we carry out full 3D numerical simulations to fully account for all radiation channels and thereby quantify…
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic…
We present a low energy model for the Bose-Einstein condensation in a quasi-two-dimensional excitonic gas. Using the flow equations of the Renormalization group and a $\Phi^4$ model with the dynamical critical exponent $z=2$ we calculate…
We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs…
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed…
We present a fully atomistic approach to exciton-phonon coupling in semiconductor quantum dots that bridges microscopic electronic-structure calculations with non-Markovian open-quantum-system dynamics. On the example of an InAsP quantum…