Related papers: Berry Curvature Engineering by Gating Two-Dimensio…
Topological aspects of electron wavefunction play a crucial role in determining the physical properties of materials. Berry curvature and Chern number are used to define the topological structure of electronic bands. While Berry curvature…
Quantum geometry, a quantum mechanical quantity comprised of Berry curvature and quantum metric, describes the geometric structure of the electronic bands in solids. The correlation between nontrivial quantum geometry and quantum materials…
Ideal Chern insulating phases arise in two-dimensional systems with broken time-reversal symmetry. They are characterized by having nearly-flat bands, and a uniform quantum geometry -- which combines the Berry curvature and quantum metric…
Starting with general semiclassical equations of motion for electrons in the presence of electric and magnetic fields, we extend the Chambers formula to include in addition to a magnetic field, time-dependent electric fields and bands with…
Within a relativistic quantum formalism we examine the role of second-order corrections caused by the application of magnetic fields in two-dimensional topological and Chern insulators. This allows to reach analytical expressions for the…
Two-dimensional materials are a fertile ground for exploring quantum geometric phenomena, with Berry curvature and its first moment, the Berry curvature dipole, playing a central role in their electronic response. These geometric properties…
Antiferromagnets exhibiting giant anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) have recently aroused broad interest, not only for their potential applications in future electronic devices, but also because of the rich…
The surface states of 3D topological insulators possess geometric structures that imprint distinctive signatures on electronic transport. A prime example is the Berry curvature, which controls, for instance, electric frequency doubling via…
Recently, a type of Hall effect due to an unusual layer-locked Berry curvature called the layer Hall effect (LHE) has been reported in the even-layered two-dimensional antiferromagnetic (AFM) MnBi2Te4 [A. Gao et.al, Nature 595, 521 (2021)].…
Layertronics that manifests layer Hall effect is typically considered to intrinsically possess binary physics. Using symmetry arguments and a low-energy kp model, we show that the layer physics in layertronics can be engineered into…
Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds display…
We report the strong experimental evidence of the existence of topological surface states with large electric field tunability and mobility in beta-Ag2Te. Pronounced 2D SdH oscillations have been observed in beta-Ag2Te nanoplates. A Berry…
The two dimensional kagome spin lattice structure of Mn atoms in the family of Mn$_3$X non-collinear antiferromagnets are providing substantial excitement in the exploration of Berry curvature physics and the associated non-trivial…
We reveal the gate-tunable Berry curvature dipole polarizability in Dirac semimetal Cd3As2 nanoplates through measurements of the third-order nonlinear Hall effect. Under an applied electric field, the Berry curvature exhibits an asymmetric…
Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In…
The spin-momentum locking of surface states in topological quantum materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magneto-electric resistance (BMER) effect offers a completely new…
The study of quantum geometry effects in materials has been one of the most important research directions in recent decades. The quantum geometry of a material is characterized by the quantum geometry tensor of the Bloch states. The…
Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…
The characterization and the experimental measurement of the Berry curvature in solids have become an increasingly relevant task in condensed matter physics. We present the theoretical prediction of a gate tunable anomalous Hall effect…
Controlling collective electronic phases in low-dimensional materials is a central challenge for developing technologies based on charge-density waves. Here, we report that perpendicular electric and magnetic fields can be used to tune…