Related papers: BAlGaN alloys nearly lattice-matched to AlN for ef…

Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…

We reported on the observation of extremely high-density ($>10^{14}$cm$^{-2}$) 2D electron gas in N-polar AlGaN/GaN heterostructures grown on sapphire substrates. Due to introducing the GaN/AlN superlattice (SL) back barrier between the GaN…

Polarisation doping of Al$_x$Ga$_{1-x}$N, through grading of $x$, has realised major improvements in $p$-type conductivity in ultraviolet (UV) light-emitting diodes (LEDs) compared to conventional impurity doping. However, the exact balance…

High Q-factors of microresonators are crucial for nonlinear integrated photonics, as many nonlinear dynamics have quadratic or even cubic dependence on Q-factors. The unique material properties make AlN microresonators invaluable for…

The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution…

Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…

The optical properties of bulk $\lambda/2$ GaN microcavities working in the strong light-matter coupling regime are investigated using angle-dependent reflectivity and photoluminescence at 5 K and 300 K. The structures have an…

We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…

Using the density functional theory (DFT) with the generalized gradient approximation (GGA), the structural and electronic properties of wurtzite AlN, GaN, InN, and their related alloys, Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N, were…

We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…

The Schottky diode, BN/GaN layered composite contacting to bulk aluminum, is theoretically plausible to harvest wireless energy above X-band. According to our first principle calculation, the insertion of GaN layers dramatically influences…

An optoelectronic optimization was carried out for an AlGaAs solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts.…

Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al. Appl. Phys. Lett. 103, 251605 (2013)] we investigate structural, electronic and vibrational properties of bulk, bilayer and…

We report ultra-wide bandgap (UWBG) AlGaN heterostructure field-effect transistors (HFETs) exhibiting a high breakdown field (> 5.3 MV/cm) and a low contact resistance (~1.55 {\Omega}mm), tailored for high-power radiofrequency applications.…

Dilute concentrations of antimony (Sb) incorporation into GaN induce strong band-gap bowing and tunable room-temperature photoluminescence from the UV to the green spectral regions. However, the atomistic details of the incorporation of Sb…

UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO…

In this paper, we study the internal quantum efficiency and lasing threshold of AlGaN/GaN separate confinement heterostructures designed for ultraviolet laser emission. We discuss the effect of carrier localization and carrier diffusion on…

Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on…

Aluminium Gallium Nitride ((Al,Ga)N) presents an ideal platform for designing ultra-violet (UV) light emitters across the entire UV spectral range. However, in the deep-UV spectral range (<280 nm) these emitters exhibit very low quantum…

Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…