Related papers: Non-Thermal Resistive Switching in Mott Insulators
We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device…
Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magn\'eli series, is one of the rare materials to exhibit an insulator-metal…
A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation)…
Recently, application of electric field (E-field) has received considerable attention as a new method to induce novel quantum phenomena since application of E-field can tune the electronic states directly with obvious scientific and…
The dynamic Mott insulator-to-metal transition (DMT) is key to many intriguing phenomena in condensed matter physics yet it remains nearly unexplored. The cleanest way to observe DMT, without the interference from disorder and other effects…
Managing light-matter interactions on timescales faster than the loss of electronic coherence is key for achieving full quantum control of the final products in solid-solid transformations. In this work, we demonstrate coherent electronic…
V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…
In vanadium dioxide, the interplay between coherent lattice transformation and electronic correlation drives an insulator-to-metal transition (IMT). This phase commutation can be triggered by temperature, pressure, doping or deposition of…
We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott…
While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…
Results from transport measurements in individual $W_{x}V_{1-x}O_{2}$ nanowires with varying extents of $W$ doping are presented. An abrupt thermally driven metal-insulator transition (MIT) is observed in these wires and the transition…
Mimicking the collective excitatory and inhibitory behaviors of biological neurons remains a critical challenge in the development of neuromorphic computing systems that rival the complexity and performance of the human brain. Volatile…
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…
Mott insulators can be portrayed as "unsuccessful metals": systems in which a strong Coulomb repulsion prevents charge conduction notwithstanding the metal-like density of conduction electrons. The possibility to unlock such large density…
The resistivity maximum at a temperature $T=T_{\mathrm{max}}$ is a recurring feature of bandwidth-tuned Mott systems, yet its meaning remains controversial: is it a coherence-incoherence crossover of an electronically homogeneous metal, or…
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD)…
Mott insulator superconductor transition, via pressure and no external doping, is studied in orbitally non degenerate spin-\half systems. It is presented as another RVB route to high \tc superconductivity. We propose a `strong coupling'…
The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…