Related papers: High-throughput fabrication and semi-automated cha…
Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators,…
Porous polymeric covalent organic frameworks (COFs) have been under intense synthetic investigation with over 100 unique structural motifs known. In order to realize the true potential of these materials, converting the powders into thin…
Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and…
Photostriction is a phenomenon that can potentially improve the precision of light-driven actuation, the sensitivity of photodetection, and the efficiency of optical energy harvesting. However, known materials with significant…
Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin-film transistors (TFTs). Spanning the…
In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and…
Physics based numerical simulation has been carried out to probe the sub-gap density of states (DOS) and underlying electron transport properties of amorphous oxide based thin film transistors (TFTs). The DOS model of TFTs consists of…
Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against short-channel effects, high air stability, and potential for…
As semiconductor technologies continue to scale down to the nanoscale, the efficient prediction of material properties becomes increasingly critical. The tight-binding (TB) method is a widely used semi-empirical approach that offers a…
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…
The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore…
Inductance of superconducting thin-film inductors and structures with linewidth down to 250 nm has been experimentally evaluated. The inductors include various striplines and microstrips, their 90-degree bends and meanders, interlayer vias,…
The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…
Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and…
Solution-processed electrochromic materials offer high potential for energy-efficient smart windows and displays. Their performance varies with material choice and processing conditions. Electrochromic thin film electrodes require a smooth,…
Scanning transmission electron microscopy (STEM) has become a cornerstone instrument for semiconductor materials metrology, enabling nanoscale analysis of complex multilayer structures that define device performance. Developing effective…
A simple method has been developed for manufacturing a thin film superconducting quantum interferometer (SQI) with ultralow inductance (~10^-13 H). Current-voltage and voltage-field characteristics of the SQI are presented. The basic design…
The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve…
In material physics, characterization techniques are foremost crucial for obtaining the materials data regarding the physical properties as well as structural, electronics, magnetic, optic, dielectric, and spectroscopic characteristics.…
We investigate a series of liquid-crystalline phthalocyanines (metal-free and Cu, Zn, Ni, Co complexes) by correlating their vibrational signatures with their electronic performance in organic thin-film transistors (OTFTs). Raman…