Related papers: Nanostructure engineering of epitaxial piezoelectr…
Epitaxial growth of (La$_{1.48}$Nd$_{0.40}$Sr$_{0.12}$)CuO$_4$ thin films was studied by pulsed-laser deposition technique on three different substrates, SrTiO$_3$ (100), LaSrAlO$_4$ (001), and YAlO$_3$ (001). The (Nd,Sr,Ce)$_2$CuO$_4$-type…
Nanoscale 3D surface modifications, by scanning tunneling microscopy under ambient conditions, of La0.7Sr0.3MnO3 thin films have been performed. It was demonstrated that there are well defined combinations of bias voltages and scan speeds…
Structuring Si in arrays of vertical high aspect ratio pillars, ranging from nanoscale to macroscale feature dimensions, is essential for producing functional interfaces for many applications. Arrays of silicon 3D nanostructures are needed…
Antimony trisulfide ($Sb_{2}S_{3}$), as an emerging material for integrated photonic devices, has attracted significant attention due to its high index, low loss, and phase-changing property in the optical regime. However, conventional…
Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band…
The fabrication of nanostructures with controlled assembly and architecture is significant for the development of novel nanomaterials-based devices. In this work we demonstrate that laser techniques coupled with low-temperature hydrothermal…
Inorganic halide perovskites have emerged as a promising platform in a wide range of applications from solar energy harvesting to computing, and light emission. The recent advent of epitaxial thin film growth of halide perovskites has made…
Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe…
A theoretical framework is developed to describe experiments on the structure of epitaxial thin films, particularly niobium on sapphire. We extend the hypothesis of dynamical scaling to apply to the structure of thin films from its…
In the past couple of decades, colloidal inorganic nanocrystals and, more specifically, semiconductor quantum dots have emerged as crucial materials for the development of nanoscience and nanotechnology, with applications in very diverse…
Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the…
Hybridization of semiconducting and magnetic materials into a single heterostructure is believed to be potentially applicable to the design of novel functional spintronic devices. In the present work we report epitaxial stabilization of…
Due to the shorter channel length allowing faster ion/charge movement, nanoscale molecular thin films can be attractive electronic components for next-generation high-performing energy storage devices. However, controlling chemical…
The use of piezoelectric substrates enables a dynamic observation of strain dependent properties of functional materials. Based on studies with La1.85Sr0.15CuO4 we extended this approach to the iron arsenic superconductors represented by…
We report on the fabrication and mid-infrared transmission properties of free-standing thin metal films, periodically patterned with holes at periods down to 2 microns and area of 3x3 mm2. Square grids were fabricated by electron beam…
Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed…
Epitaxial NdBa2Cu3O7-x films with a hybrid nanoscale defect structure comprised of BaZrO3 nanodot arrays aligned along the c-axis in one half of the film thickness and aligned perpendicular to the c-axis in the other half thickness of the…
The present paper is dedicated to the structural study of crystallographic peculiarities appearing in epitaxial films of metastable epsilon iron oxide ($\varepsilon$-Fe$_2$O$_3$) grown by pulsed laser deposition onto a semiconductor GaN…
Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently…
Nanoporous materials represent a versatile solution for a number of applications ranging from sensing, energy applications, catalysis, drug delivery, and many others. The synergy between the outstanding properties of graphene with a…