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The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and…
Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric…
Using oxide substrates for functional ceramic thin film deposition beyond their usual application as chemical inert, lattice-matched support for the films represents a novel concept in ceramic thin film research. The substrates are applied…
Ferroelectric oxides have attracted much attention due to their wide range of applications, especially in electronic devices such as nonvolatile memories and tunnel junctions. As a result, the monolithic integration of these materials into…
Nanofabrication research pursues the miniaturization of patterned feature size. In the current state of the art, micron scale areas can be patterned with features down to ~ 30 nm pitch using electron beam lithography. Our work demonstrates…
Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental…
Micro-solid oxide fuel cells based on thin films have strong potential for use in portable power devices. However, devices based on silicon substrates typically involve thin-film metallic electrodes which are unstable at high temperatures.…
(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray…
We exploit the intrinsic structural instability of the Fe70Pd30 magnetic shape memory alloy to obtain functional epitaxial films exhibiting a self-organized nanostructure. We demonstrate that coherent epitaxial straining by 54% is possible.…
Functional properties of ferroelectric thin films are governed by domains that can be engineered by epitaxial strain. Soft X-ray microscopy can image domain structures with elemental and electronic sensitivity, but hitherto its application…
We report on scalable heterointegration of superconducting electrodes and epitaxial semiconductor quantum dots on strong piezoelectric and optically nonlinear lithium niobate. The implemented processes combine the sputter-deposited thin…
The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline…
Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large…
We report growth, electronic structure and superconductivity of ultrathin epitaxial CoSi2 films on Si(111). At low coverages, preferred islands with 2, 5 and 6 monolayers height develop, which agrees well with the surface energy…
The present work illustrates a novel approach for the maskless and resistless fabrication of nanopatterned metal layers on Si substrates, based on the combination of nanomechanical surface modification techniques (such as nanoindentation…
Superconducting qubits show great promise for the realization of fault-tolerant quantum computing, but lossy, amorphous dielectrics limit current technology. Identifying highly crystalline and stoichiometric dielectrics with intrinsically…
Oxide based ferromagnet/semiconductor heterostructures offer substantial advantages for spin electronics. We have grown (111) oriented Fe3O4 thin films and Fe3O4/ZnO heterostructures on ZnO(0001) and Al2O3(0001) substrates by pulsed laser…
Unintentionally formed interfacial layers are ubiquitous in semiconductor devices that operate at extreme conditions. However, these layers' structure and properties often remain unknown due to the thinness of these naturally formed…
Synthesis of rationally designed nanostructured materials with optimized mechanical properties, e.g., high strength with considerable ductility, requires rigorous control of diverse microstructural parameters including the mean size, size…
Nano-fabrication in silicon, arguably the most important material for modern technology, has been limited exclusively to its surface. Existing lithographic methods cannot penetrate the wafer surface without altering it, whereas emerging…