Related papers: TCAD model for TeraFET detectors operating in a la…
Among its many outstanding properties, graphene supports terahertz surface plasma waves -- sub-wavelength charge density oscillations connected with electromagnetic fields that are tightly localized near the surface[1,2]. When these waves…
We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed…
Using optical technology for current injection and electromagnetic emission simplifies the comparison between materials. Here, we inject current into monolayer graphene and bulk gallium arsenide (GaAs) using two-color quantum interference…
We propose and discuss terahertz electro-absorption modulators based on graphene plasmonic structures. The active device consists of a self-gated pair of graphene layers, which are patterned to structures supporting THz plasmonic…
Imaging applications in the terahertz (THz) frequency range are severely restricted by diffraction. Near-field scanning probe microscopy is commonly employed to enable mapping of the THz electromagnetic fields with sub-wavelength spatial…
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…
Time-resolved terahertz time-domain spectroscopy (THz-TDS) is an ideal tool for probing photoinduced nonequilibrium metallic and superconducting states. Here, we focus on the interpretation of the two-dimensional response function…
Phase modulation plays a crucial role in various terahertz applications, including biomedical imaging, high-rate communication, and radar detection. Existing terahertz phase shifters typically rely on tuning the resonant effect of…
In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-Around (GAA) nanowire Tunneling Field Effect Transistor…
Nonlinear processes involving frequency-mixing of light fields set the basis for ultrafast coherent spectroscopy of collective modes in solids. In certain semimetals and semiconductors, generation of coherent phonon modes can occur by a…
Recent intense electrical and optical studies of graphene have pushed the material to the forefront of optoelectronic research. Of particular interest is the few terahertz (THz) frequency regime where efficient light sources and highly…
We simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre…
Local phase control of electromagnetic wave, the basis of a diverse set of applications such as hologram imaging, polarization and wave-front manipulation, is of fundamental importance in photonic research. However, the bulky, passive phase…
Plasmonic photoconductive antennas have great promise for increasing responsivity and detection sensitivity of conventional photoconductive detectors in time-domain terahertz imaging and spectroscopy systems. However, operation bandwidth of…
We propose to utilize multiple-graphene-layer structures with lateral p-i-n junctions for terahertz (THz) and infrared (IR) photodetection and substantiate the operation of photodetectors based on these structures. Using the developed…
We have fabricated a centimeter-size single-layer graphene device, with a gate electrode, which can modulate the transmission of terahertz and infrared waves. Using time-domain terahertz spectroscopy and Fourier-transform infrared…
To increase the scientific output of particle physics experiments, upgrades are underway at all major accelerator facilities to significantly improve the luminosity. Consequently, the solid-state detectors used in the experiments will…
The time-dependent gain variation of detectors incorporating Thick Gas Electron Multipliers (THGEM) electrodes was studied in the context of charging-up processes of the electrode's insulating surfaces. An experimental study was performed…
Radiation-hard silicon sensors used in high-energy physics require a high electric field and are susceptible to surface breakdown. This study aims to improve the understanding of the underlying mechanisms by developing new methods to probe…
We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of…