Related papers: Strain controllable magnetocrystalline anisotropy …
Fundamental understanding of interfacial magnetic properties in ferromagnetic heterostructures is essential to utilize ferromagnetic materials for spintronic device applications. In this paper, we investigate the interfacial magnetic and…
Magnetic anisotropy controls the orientational stability and switching properties of magnetic states, and therefore plays a central role in spintronics. First-principles density-functional-theory calculations are able, in most cases, to…
The effect of strain on the magnetic order and band structure of single-layer CrAsS$_4$ has been investigated by first-principles calculations based on density functional theory. We found that single-layer CrAsS$_4$ was an antiferromagnetic…
We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence band holes and a…
Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…
Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for…
We report the magnetotransport properties of ferromagnet (FM)/antiferromagnet (AFM) Fe$_2$CrSi/Ru$_2$MnGe epitaxial bilayers using current-in-plane configurations. Above the critical thickness of the Ru$_2$MnGe layer to induce exchange…
The pivotal role of magnetic anisotropy in stabilising two-dimensional (2D) magnetism has been widely accepted, however, direct correlation between magnetic anisotropy and long-range magnetic ordering in the 2D limit is yet to be explored.…
Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in…
Voltage controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the magnetization states in nanomagnets, promising for low-power spintronic applications. The underlying physical mechanism for VCMA is known to involve a…
Perpendicular magnetic anisotropy (PMA) energy up to $K_{\mathrm{u}}=6.1\pm0.8$ MJ m$^{-3}$ is demonstrated in this study by inducing large lattice-distortion exceeding 3% at room temperature in epitaxially distorted cobalt ferrite Co$ _{x}…
External magnetic fields provide a macroscopic control mechanism to influence the microstructure of polycrystalline materials. We model the influence of strong magnetic fields on grain growth in thin films with a magnetic extended phase…
Flexible magnetic materials with robust and controllable perpendicular magnetic anisotropy (PMA) are highly desirable for developing flexible high-performance spintronic devices. However, it is still challenge to fabricate PMA films through…
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate…
We report on a comprehensive investigation of the effects of strain and film thickness on the structural and magnetic properties of epitaxial thin films of the prototypal $J_\mathrm{eff}=1/2$ compound Sr$_2$IrO$_4$ by advanced X-ray…
We present a phenomenological scheme to study the size-dependent electric voltage-controlled magnetic anisotropy in ferromagnetic (FM)/ferroelectric (FE) heterostructures. The FM layers are either metallic Fe(001), Ni(001), Co(0001), or…
We investigate the structural and magnetic properties of La$_{0.7}$Sr$_{0.3}$CrO$_3$ (LSCO)/La$_{0.7}$Sr$_{0.3}$MnO$_3$(LSMO) heterostructures grown on (001)-oriented MgO by molecular beam epitaxy. Due to the large film-substrate lattice…
Fourth order perturbation was applied to study a small variation of the azimuthal angle of spin of fcc structured ferromagnetic thin films with two spin layers. The variation of magnetic energy and the orientation of magnetic easy axis with…
We study the effect of uniaxial strain on the band structure of ZrSe$_3$, a semiconducting material with a marked in-plane structural anisotropy. By using a modified 3-point bending test apparatus, thin ZrSe$_3$ flakes were subjected to…
Anisotropic strain engineering in epitaxial oxide films provides new opportunities to control the antiferromagnetic and structural properties crucial for advancements of antiferromagnetic spintronics. Here we report on a…