Related papers: Strain controllable magnetocrystalline anisotropy …
Stripe domains are studied in perpendicular magnetic anisotropy films nanostructured with a periodic thickness modulation that induces the lateral modulation of both stripe periods and inplane magnetization. The resulting system is the 2D…
Magnetic anisotropy (MA) is one of the most important material properties for modern spintronic devices. Conventional manipulation of the intrinsic MA, i.e. magnetocrystalline anisotropy (MCA), typically depends upon crystal symmetry.…
We report on domain formation and magnetization reversal in epitaxial Fe films on ferroelectric BaTiO3 substrates with ferroelastic a-c stripe domains. The Fe films exhibit biaxial magnetic anisotropy on top of c domains with out-of-plane…
The electronic structure of epitaxial films on LaCoO3(LCO) has been studied within first principle electronic structure calculations. A spin state transition is found to take place as a function of lattice strain which freezes in the…
A current challenge in the field of magnetoelectric multiferroics is to identify systems that allow a controlled tuning of states displaying distinct magnetoelectric responses. Here we show that the multiferroic ground state of the…
Magnetocrystalline anisotropy at Heusler alloy$|$MgO interfaces have been studied using first principles calculations. It is found that Co terminated Co$_{2}$FeAl$|$MgO interfaces show perpendicular magnetic anisotropy up to 1.31 mJ/m$^2$,…
Domain walls in magnetic multilayered systems can exhibit a very complex and fascinating behavior. For example, the magnetization of thin films of hard magnetic materials is in general perpendicular to the thin-film plane, thanks to the…
We report first-principles investigations of magnetocrystalline anisotropy energy (MCAE) oscillations as a function of capping layer thickness in Heusler alloy Co\textsubscript{2}FeAl/Ta heterostructures. Substantial oscillation is observed…
(001) oriented NiO/NiFe bilayers were grown on single crystal MgO (001) substrates by ion beam sputtering in order to determine the effect that the crystalline orientation of the NiO antiferromagnetic layer has on the magnetization curve of…
The suitability of a particular material for use in magnetic devices is determined by the process of magnetization reversal/relaxation, which in turn depends on the magnetic anisotropy. Therefore, designing new ways to control magnetic…
Transport and magnetic properties of LSMO manganite thin films and bicrystal junctions were investigated. Manganite films were epitaxially grown on STO, LAO, NGO and LSAT substrates and their magnetic anisotropy were determined by two…
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…
The influence of uniaxial anisotropy and the dipole interaction on the direction of the magnetization of ultra-thin ferromagnetic films in the ground-state is studied. The ground-state energy can be expressed in terms of anisotropy…
Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing…
Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy…
Magnetic anisotropy (MA) plays a crucial role in deciding both static and dynamic behaviour of magnetic thin films. It controls various phenomena, such as magnetization reversal, domain formation, domain-wall motion, spin-wave generation,…
We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray…
The magnetic anisotropy (MA) of Mo/Au/Co0.9Fe0.1/Au/MgO(0.7 - 3 nm)/Au/Co0.9Fe0.1/Au heterostructure has been investigated at room temperature as a function of MgO layer thickness (tMgO). Our studies show that while the MA of the top layer…
The recent discovery of ferromagnetic single-layer CrI3 creates ample opportunities for studying fundamental properties of atomically-thin magnets. By using first-principles calculations and model analysis, we show that a lateral strain…
Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal…