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The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions…

Mesoscale and Nanoscale Physics · Physics 2018-05-10 Isidoro Martínez , Coriolan Tiusan , Michel Hehn , Mairbek Chshiev , Farkhad G. Aliev

Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we…

Materials Science · Physics 2014-11-04 Zhaoqiang Bai , Lei Shen , Yongqing Cai , Qingyun Wu , Minggang Zeng , Guchang Han , Yuan Ping Feng

Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile…

Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nano-electronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence,…

Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk…

Materials Science · Physics 2017-06-21 Le Duc Anh , Noboru Okamoto , Munetoshi Seki , Hitoshi Tabata , Masaaki Tanaka , Shinobu Ohya

Epitaxial strain has emerged as a powerful tool to tune magnetic and ferroelectric properties in functional materials such as in multiferroic perovskite oxides. Here, we use first-principles calculations to explore the evolution of magnetic…

Materials Science · Physics 2023-11-23 Sebastian Meyer , Bin Xu , Laurent Bellaiche , Bertrand Dupé

Least absolute shrinkage and selection operator (Lasso) was originally formulated for least squares models and this simple case reveals a substantial amount about the behavior of the estimator. It also shows that the coefficient estimates…

Materials Science · Physics 2019-08-14 Eun Sung Jekal , Hyunwoo Park

The exchange bias at ferromagnetic/antiferromagnetic interfaces strongly depends upon the state of antiferromagnetic (AF) layer which, due to strong magnetoelastic coupling, is sensitive to mechanical stresses. In the present paper we…

Materials Science · Physics 2014-05-13 Olena Gomonay , Igor Lukyanchuk

Magnetic anisotropy is a key parameter to describe the exchange bias effect in heterostructures. In this paper, we describe explicit density functional calculations of the magnetic structure of an interface between the industrially…

Materials Science · Physics 2025-09-03 Robert A. Lawrence , Matt I. J. Probert

Very high magnetic anisotropies have been theoretically predicted for strained Fe-Co(-X) and indeed several experiments on epitaxial thin films seemed to confirm strain induced anisotropy enhancement. This study presents a critical analysis…

The magnetic domain structure is studied in epitaxial Fe$_{100-x}$Ga$_x$/MgO(001) films with 0 $<$ x $<$ 30 and thicknesses below 60 nm by magnetic force microscopy. For low gallium content, domains with the magnetization lying in the film…

Materials Science · Physics 2019-07-31 Adrián Begué , Maria Grazia Proietti , José I. Arnaudas , Miguel Ciria

FeRh based alloys may display an uncommon transition from a ferromagnetic to an antiferromagnetic state upon cooling. The transition takes place roughly above room temperature and it can be sensitively modulated by composition and external…

Materials Science · Physics 2019-11-14 Ignasi Fina , Josep Fontcuberta

The interface between organic semiconductor [OSC]/ferromagnetic [FM] material can exhibit ferromagnetism due to their orbital hybridization. Charge/spin transfer may occur from FM to OSC layer leading to the formation of `spinterface' i.e.…

A first principles study is conducted to explore the changes in the magnetic structure of Mn\textsubscript{3}GaN under anisotropic biaxial strain. Mn\textsubscript{3}GaN is an antiperovskite with a structure similar to that of an ideal…

Materials Science · Physics 2025-10-22 Roman Malyshev , Ingeborg-Helene Svenum , Sverre M. Selbach , Thomas Tybell

In the perovskite oxide SrCrO$_{3}$ the interplay between crystal structure, strain and orbital ordering enables a transition from a metallic to an insulating electronic structure under certain conditions. We identified a narrow window of…

Controlling magnetic anisotropy energy (MAE) in two-dimensional (2D) ferromagnetic materials is crucial for designing novel spintronic devices. Using first-principles calculations, we systematically investigate the magnetic properties of…

Materials Science · Physics 2024-11-22 Xunwu Hu , Dao-Xin Yao , Kun Cao

Search for ultrathin magnetic film with large perpendicular magnetocrystalline anisotropy (PMA) has been inspired for years by the continuous miniaturization of magnetic units in spintronics devices. The common magnetic materials used in…

Materials Science · Physics 2018-06-07 Xiaoxuan Ma , Jun Hu

The strain dependence of electric and magnetic properties has been widely investigated, both from a fundamental science perspective and an applications point of view. Electromechanical coupling through field-induced polarization rotation…

Materials Science · Physics 2015-06-22 Zhiguang Wang , Yaojin Wang , Haosu Luo , Jiefang Li , D. Viehland

Magneto-transport properties of SrIrO$_3$ thin films epitaxially grown on SrTiO$_3$, using reactive RF sputtering, are investigated. A large anisotropy between the in-plane and the out-of-plane resistivities is found, as well as a signature…

Strongly Correlated Electrons · Physics 2017-07-04 L. Fruchter , O. Schneegans , Z. Z. Li

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of…