Related papers: The analytical description of a doped Mott insulat…
High temperature superconductivity was achieved by introducing holes in a parent compound consisting of copper oxide layers separated by spacer layers. It is possible to dope some of the parent compounds with electrons, and their physical…
We define a suitable quantity $Z_c$ that measures the pairing strength of two electrons added to the ground state wave function by means of the anomalous part of the one-particle Green's function. $Z_c$ discriminates between systems…
The electric resistivity is examined in the constrained Hilbert space of a doped Mott insulator, which is dictated by a non-Ioffe-Larkin composition rule due to the underlying mutual Chern-Simons topological gauge structure. In the…
We show that a particular class of variational wave functions reproduces the low-energy properties of the Hubbard model in one dimension. Our approach generalizes to finite on-site Coulomb repulsion the fully-projected wave function…
We show that doped Mott insulators, such as the copper-oxide superconductors, are asymptotically slaved in that the quasiparticle weight, $Z$, near half-filling depends critically on the existence of the high energy scale set by the upper…
The recent advances in angle resolved photoemission techniques allowed the unambiguous experimental confirmation of spin charge decoupling in quasi one dimensional (1D) Mott insulators. This opportunity stimulates a quantitative analysis of…
We introduce a systematic low-energy approach to strongly correlated electron systems in infinite dimensions, and apply it to the problem of the correlation-induced metal-insulator transition in the half-filled Hubbard model. We determine…
We study the phase diagram of a one-dimensional Hubbard model where, in addition to the standard nearest neighbor hopping $t$, we also include a next-to-nearest neighbor hopping $t'$. For strong enough on-site repulsion, this model has a…
We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…
The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among possible competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of…
We perform a thorough study of an extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using dynamical mean-field theory we investigated the zero temperature phase-diagram of this model as a function of the…
Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum…
The Mott system with a low-energy excitation may well constitute the underlying system for high temperature superconductivity (HTSC) of under-doped cuprates. This manuscript explores the above through the Hubbard-1 approximation (the Green…
A theory for the Hubbard model appropriate in the limit of large U/t, small doping away from half-filling and short-ranged antiferromagnetic spin correlations is presented. Despite the absence of any broken symmetry the Fermi surface takes…
We argue that interesting strongly correlated two-dimensional electron systems can be created by modulation doping near a heterojunction between Mott insulators. Because the dopant atoms are remote from the carrier system, the electronic…
We show that doping-induced charge fluctuations in strongly correlated Hubbard electron systems near the 1/2-filled, insulating limit cause overscreening of the electron-electron Coulomb repulsion. The resulting attractive screened…
We investigate the interaction-driven reorganization of spin and charge correlations in finite Hubbard clusters using exact diagonalization. Focusing on half-filled and lightly doped square lattices, we analyze spin-resolved charge-gaps,…
Superconductivity in copper oxides emerges on doping holes or electrons into their Mott insulating parent compounds. The spin excitations are thought to be the mediating glue for the pairing in superconductivity. Here the momentum and…
The undoped antiferromagnetic Mott insulator naturally has one charge carrier per lattice site. When it is doped with additional carriers, they are unstable to spin fluctuation-mediated Cooper pairing as well as other unconventional types…
The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…