Mott-Hubbard localization in model of electronic subsystem of doped fullerides
Strongly Correlated Electrons
2012-01-16 v1
Abstract
Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum of the model at integer band filling is calculated, which case corresponds to compounds. Possible correlation-driven metal-insulator transition in the model is discussed.
Keywords
Cite
@article{arxiv.1201.2748,
title = {Mott-Hubbard localization in model of electronic subsystem of doped fullerides},
author = {Yuriy Dovhopyaty and Leonid Didukh and Oleksandr Kramar and Yuriy Skorenkyy and Yuriy Drohobitskyy},
journal= {arXiv preprint arXiv:1201.2748},
year = {2012}
}