Related papers: Gating effects in antiferromagnetic CuMnAs
We theoretically investigate magnon heat transport in an antiferromagnetic (AFM) insulator containing a domain wall (DW) in the presence of a magnetic field applied along the easy axis. We show that the intrinsic spin of the DW couples to…
Noncollinear antiferromagnets (nc-AFMs) have attracted increasing research attention in spintronics due to their unique spin structures and fascinating charge and spin transport properties. By using first-principles calculations, we…
An all-electrical spin resonance effect in a GaAs few-electron double quantum dot is investigated experimentally and theoretically. The magnetic field dependence and absence of associated Rabi oscillations are consistent with a novel…
Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In…
We theoretically examine a cross effect of magnetic field and charge current on antiferromagnetic domain wall dynamics. Since antiferromagnetic materials are largely insensitive to external magnetic fields in general, charge current has…
The spin-Seebeck effect was recently discovered in a metallic ferromagnet and consists of a thermally generated spin distribution that is electrically measured utilizing the inverse spin Hall effect. Here this effect is reproduced…
Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures…
Antiferromagnetic (AF) spin fluctuations are commonly believed to play a key role in electron pairing of cuprate superconductors. In electron-doped cuprates, it is still in paradox about the interplay among different electronic states in…
Antiferromagnetic (AFM) materials with zero or vanishingly small macroscopic magnetization are nowadays the constituent elements of spintronic devices. However, possibility to use them as active elements that show nontrivial controllable…
Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and…
A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of…
The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM)…
Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of…
The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer…
We predict the giant ferroelectric control of interfacial properties of Ni/HfO2, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using…
The spin Hall effect is a phenomenon that an electric field induces a spin Hall current. In this Letter, we examine the inverse effect that, in a ferromagnetic conductor, a charge Hall current is induced by a spin motive force, or a…
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a…
The efficient detection of the magnetism in 2D antiferromagnetic (AFM) insulators is crucial for the advancement of 2D AFM spintronics and remains a challenging problem. In this letter, we introduce the magnon nonlinear Hall current, a…