Related papers: Gating effects in antiferromagnetic CuMnAs
In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the devices. The numerous research efforts directed to manipulate and…
In the circular photogalvanic effect, circularly polarized light can produce a direct electron photocurrent in metals and the direction of the current depends on the polarization. We suggest that an analogous nonlinear effect exists for…
We propose realizing the quantum anomalous Hall effect by proximity coupling graphene to an antiferromagnetic insulator that provides both broken time-reversal symmetry and spin-orbit coupling. We illustrate our idea by performing ab initio…
Recently orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of antiferromagnetic state in Mn3Sn/Cr, where despite the much…
The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large…
Electronic, magnetic, and transport properties of the antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure, promising for the AFM spintronics, are studied from first principles using the Vienna ab-initio simulation package. We…
The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We…
We propose encapsulating type-A antiferromagnetic semiconductors between graphene layers to realize a gate-tunable synthetic antiferromagnet with nonrelativistic spin splitting, enabling efficient spintronic transport via graphene. Ab…
Antiferromagnetic Kagome semimetals have attracted tremendous attentions for their potential application in antiferromagnetic topological spintronics. Effectively manipulating Kagome antiferromagnetic states could reveal abundant physical…
Inverse spin Hall effect (ISHE) in ferromagnetic metals (FM) can also be used to detect the spin current generated by longitudinal spin Seebeck effect in a ferromagnetic insulator YIG. However, anomalous Nernst effect(ANE) in FM itself…
Antiferromagnetic (AF) domain walls have recently attracted revived attention, not only in the emerging field of AF spintronics, but also more specifically for offering fast domain wall velocities and dynamic excitations up to the terahertz…
Spin-orbitronics and Dirac quasiparticles are two fields of condensed matter physics initiated independently about a decade ago. Here we predict that Dirac quasiparticles can be controlled by the spin-orbit torque reorientation of the…
We present new results obtained by field effect measurements on insulating granular Al thin films. First, reproducible and stable conductance fluctuations are seen in micron size samples as a function of gate voltage. The anomalous field…
The use of antiferromagnets in magnetoelectronic devices as counterparts of ferromagnets is a new, rapidly developing trend in spintronics that leverages antiferromagnetic (AFM) magnons for transmitting of spin currents. Van der Waals (vdW)…
We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak…
Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both…
In this paper we extend the micromagnetic theory of magnetostatic surface waves in insulating ferromagnetic thin films to include the applied electric field effects. We start by identifying the two main effects on the dispersion relation:…
Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have…
The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into TI, which breaks the TRS, is expected to create exotic…
We have investigated the effect of electric field control on the magnetization and the transport properties in La0.7Ca0.3MnO3 (LCMO) ultrathin film (~10 nm) by using it as the semiconductor channel material of a prototypical field effect…