Related papers: Two-dimensional orbital Hall insulators
The orbital Hall effect (OHE), resulting from non-trivial quantum geometry of 2D materials, has several potential advantages over the spin Hall effect (SHE), the latter being well known for its many applications in spintronics. Like the…
We show theoretically that both intrinsic spin Hall effect (SHE) and orbital Hall effect (OHE) can arise in centrosymmetric systems through momentum-space orbital texture, which is ubiquitous even in centrosymmetric systems unlike spin…
Orbital Hall effect (OHE) is the phenomenon of transverse flow of orbital moment in presence of an applied electric field. Solids with broken inversion symmetry are expected to exhibit a strong OHE due to the presence of an intrinsic…
We demonstrate the formation of orbital and spin Hall effects (OHE/SHE) in the 1T phase of non-magnetic transition metal dichalcogenides. With the aid of density functional theory calculations and model Hamiltonian studies on MX$_2$ (M =…
The orbital Hall effect (OHE) designates the generation of a charge-neutral flow of orbital angular momentum transverse to an initial charge current. Recent theoretical investigations suggest that transition metals display sizable OHE,…
Comparing with the spin of electron, the electronic orbitals, which have been long ignored in non-equilibrium transport, are getting more and more attentions, due to the prediction and experimental verification of orbital Hall effect (OHE)…
We propose a mechanism of intrinsic spin Hall effect (SHE). In this mechanism, local orbital angular momentum (OAM) induces electron position shift and couples with the bias electric field to generate orbital Hall effect (OHE). SHE then…
A recent paper [Go $\textit{et al}$., Phys. Rev. Lett. $\textbf{121}$, 086602 (2018)] proposed that the intrinsic orbital Hall effect (OHE) can emerge from momentum-space orbital texture in centrosymmetric materials. In searching for real…
The intrinsic orbital Hall effect (OHE), the orbital counterpart of the spin Hall effect, was predicted and studied theoretically for more than one decade, yet to be observed in experiments. Here we propose a strategy to convert the orbital…
Carrying information using generation and detection of the orbital current, instead of the spin current, is an emerging field of research, where the orbital Hall effect (OHE) is an important ingredient. Here, we propose a new mechanism of…
The theory of the orbital Hall effect (OHE), a transverse flow of orbital angular momentum in response to an electric field, has concentrated overwhelmingly on intrinsic mechanisms. Here, using a quantum kinetic formulation, we determine…
Despite the recent success of identifying experimental signatures of the orbital Hall effect (OHE), the research on the microscopic mechanisms behind this unique phenomenon is still in its infancy. Here, using a gapped 2D Dirac material as…
The orbital Hall effect (OHE) has attracted significant attention for developing energy-efficient electronic devices. However, utilizing it in fast, low-power devices requires an enhanced understanding of underlying extrinsic and intrinsic…
The orbital Hall effect (OHE) is attracting recent interest due to its fundamental science implications and potential applications in orbitronics and spintronics. Unlike the spin Hall effect, the connection between the OHE and band topology…
In transition metals and their compounds, the orbital degrees of freedom gives rise to an orbital current, in addition to the ordinary spin and charge currents. We reveal that considerably large spin and anomalous Hall effects (SHE and AHE)…
We present an analysis of the orbital Hall effect (OHE) in a strip geometry and derive a formula for the orbital angular momentum (OAM) accumulation at the edges. The result is expressed in terms of band structure parameters and scattering…
The optical spin Hall effect (OSHE) is a transport phenomenon of exciton polaritons in semiconductor microcavities, caused by the polaritonic spin-orbit interaction, that leads to the formation of spin textures. In the semiconductor cavity,…
Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE)…
We investigate a generalized multi-orbital tight-binding model on a triangular lattice, a system prevalent in a wide range of two-dimensional materials, and particularly relevant for simulating transition metal dichalcogenide monolayers. We…
The spin Hall effect (SHE), in which electrical current generates transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polarized electrons. The phenomenon originates from spin-orbit…