Related papers: Material and device characterization of Type-II In…
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…
Microscopic features of carrier localization, minibands, and spectral currents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied and investigated in detail. In the presence of momentum and…
We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high…
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana fermions in solid state, a fundamental research…
This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three different methods: metamorphic, interfacial misfit (IMF) matrix,…
Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding…
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully…
High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to…
We report the first fully self-consistent calculations of the nonlinear optical properties of superlattices. The materials investigated are mono-layer superlattices with GaP grown on the the top of InP, AlP and GaAs (110) substrates. We use…
We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified…
The influence of growth interruption on the luminescence properties of the Ga(As,Sb)/GaAs interface have been studied by continous wave and time resolved photoluminescence spectrosocopy in type II Ga(As,Sb)/GaAs/(Ga,In)As double quantum…
(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental…
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological…
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good…
Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si…
The present work reports, for the first time, the growth of high-quality free-standing InAsSb nanoflags and their electronic properties. Different growth conditions have been explored, and zinc-blende InAsSb nanoflags of various composition…
We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $\omega$ full width half max of $7.7^{''}$…
The large Land\'{e} g-factor, high spin-orbit coupling, and low effective mass of the two-dimensional electron gas in InSb quantum wells combined with proximal superconductivity may realize a scalable platform for topological quantum…
Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were…
An accurate knowledge of the lattice parameters of the new nitride Sc$_\textit{x}$Al$_\textit{1-x}$N is essential for understanding the elastic and piezoelectric properties of this compound as well as for the ability to engineer its strain…