Related papers: Capacitance-voltage measurements of (Bi$_{1-x}$Sb$…
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the…
This work re-defines the well-known C/V (capacitance-voltage) measurement technique, in the view of a new physics formula, discovered in 2006 by the same author.
Capacitance measurements are crucial for probing the electrical properties of materials. In this study, we develop and implement a capacitance measurement technique optimized for pulsed magnetic fields. Our approach employs an…
Electric field dependent capacitance and dielectric loss in poly(3-hexylthiophene) are measured by precision capacitance bridge. Carrier mobility and density are estimated from fits to current-voltage and capacitance data. The capacitance…
Capacitance-Voltage (CV) measurements along with the Mott-Schottky (MS) analysis are widely used for characterization of material and device parameters. Using a simple analytical model, supported by detailed numerical simulations, here we…
We have measured both the current-voltage ($I_\mathrm{SD}$-$V_\mathrm{GS}$) and capacitance-voltage ($C$-$V_\mathrm{GS}$) characteristics of a $\mathrm{MoS_2-LiNbO_3}$ field effect transistor. From the measured capacitance we calculate the…
This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded…
Metal-Oxide-Semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO_2 layer were studied for their capacitance characterization. Ge atoms were introduced by implantation of 74Ge+ ions with energy of 150…
The capacitance of arrays of vertical wrapped-gate InAs nanowires are analyzed. With the help of a Poisson-Schr"odinger solver, information about the doping density can be obtained directly. Further features in the measured…
We experimentally investigate capacitance response of a thick ferroelectric GeTe single-crystal flake on the Si/SiO2 substrate, where p-doped Si layer serves as a gate electrode. We confirm by resistance measurements, that for…
We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device.…
We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage…
We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the…
The unique capabilities of capacitance measurements in bilayer graphene enable probing of layer-specific properties that are normally out of reach in transport measurements. Furthermore, capacitance measurements in the top-gate and…
The reconstruction on Ge(001) surface is locally and reversibly changed between c(4x2) and p(2x2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80K. It is c(4x2) with the sample bias voltage V_b =< -0.7V. This…
A new acousto-electrical method making use of transient transverse acoustoelectric voltage (TAV) to study solid state structures is reported. This voltage arises after a surface acoustic wave (SAW) generating the signal is switched off.…
The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF admittance of the capacitors versus gate voltage, we extract…
The effect of the magnetic field on a capacitor with a superconducting electrode is studied within the Ginzburg-Landau approach. It is shown that the capacitance has a discontinuity at the onset of the surface superconductivity $B_{\rm c3}$…
Photocurrent-voltage characteristic (PC-V) is a method of determining the critical parameter in X-ray and gamma-ray detector plates, i.e., the carrier mobility - lifetime product, mt. We show on the (Cd,Mn)Te samples that the measurement…
We have developed a highly-sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below kT over a broad…