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We report pressure-induced superconductivity in the spinel CuIr$_{2}$S$_{4}$ with a transition temperature ($T_{\text{c}}$) reaching \textbf{18.2 K}, establishing a new record for this class of materials and surpassing the decades-old limit…

Measurements of electrical resistivity were performed between 3 and 300 K at various pressures up to 2.8 GPa on the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = Pr, Nd). At lower pressures, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 exhibit…

This work presents the 8-channel FastIC+, a low-power consumption and highly configurable multi-channel front-end ASIC with internal digitization, for the readout of photo-sensors with picosecond time resolution and intrinsic gain. This…

We present the first demonstration of THz-driven bunch compression and timing stabilization of a few-fC relativistic electron beam with kinetic energy of 2.5 MeV using quasi-single-cycle strong field THz radiation in a shorted…

Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to…

Using two-dimensional THz spectroscopy in combination with numerical models, we investigate the dynamics linked to carrier multiplication caused by high-field THz excitation of the low-gap semiconductor InSb. In addition to previously…

Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…

Heavy ion inertial fusion (HIF) energy would be one of promising energy resources securing our future energy in order to sustain our human life for centuries and beyond. The heavy ion beam (HIB) has remarkable preferable features to release…

Accurate measurement of transistor parasitic capacitance and its associated energy losses is critical for evaluating device performance, particularly in high-frequency and high-efficiency power conversion systems. This paper proposes a…

In this letter, we report on high performance depletion/enhancement (D/E)-mode beta-Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (ID) of 600/450 mA/mm, which are nearly one order of magnitude…

A comprehensive study of the vortex phases and vortex dynamics is presented for a recently discovered high-temperature superconductor ThH$_{10}$ with $\textit{T}$$_C$ = 153 K at 170 GPa. The obtained results strongly suggest a quasi…

Recently, it has been shown that the chiral magnetic insulator Cu$_2$OSeO$_3$ hosts skyrmions in two separated pockets in temperature and magnetic field phase space. It has also been shown that the predominant stabilization mechanism for…

We describe novel optical switching schemes operating at femtosecond time scales by employing free carrier (FC) excitation. Such unprecedented switching times are made possible by spatially patterning the density of the excited FCs. In the…

Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and…

With the rapid growth of renewable energy being integrated, transmitted, and utilized in various forms, power systems are evolving from traditional metal-based infrastructures to advanced semiconductor-based technologies. Central to this…

For H- charge exchange (stripping) injection to European Spallation Source (ESS) storage ring it is necessary to have H- ion source with a current of ~90 mA, pulses duration 3 ms, and repetition of 14 Hz (duty factor ~4%) extendable to…

We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…

The superconducting-insulator transition is simulated in disordered networks of Josephson junctions with thermally activated Arrhenius-like resistive shunt. By solving the conductance matrix of the network, the transition is reproduced in…

We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…

Resonant x-ray diffraction experiments were performed for the metallic iridium oxide IrO$_{2}$. We observed anisotropic tensor of susceptibility (ATS) scattering, the spectrum of which shows a sharp contrast between the $L_{3}$ and $L_{2}$…