Novel active avalanche paradigm for power semiconductor device extending extending SOA to 6.5kV/15kA
Abstract
With the rapid growth of renewable energy being integrated, transmitted, and utilized in various forms, power systems are evolving from traditional metal-based infrastructures to advanced semiconductor-based technologies. Central to this transformation, power semiconductor devices now face the crucial demands of ultrahigh switching ability, presenting a long-standing challenge in the field. In this work, building on the P-N-P-N scheme, we propose a novel Avalanche Controlled Thyristor (ACT) device, which pivots an active avalanche paradigm to realize robust and strong switch-off ability through semiconductor-level electrical potential manipulation. Unprecedentedly, we achieve a controllable switch-off current record of 15kA, 375% that of the conventional devices without sacrificing the blocking and conduction capability. The novel device signifies that switching ability is no longer a bottleneck for power semiconductor devices, which is believed to revolutionarily reshape the technical and practical landscape of power conversion, and fundamentally boost the large-scale integration, cross-regional transmission, and cost-effective utilization of renewable energy.
Cite
@article{arxiv.2505.16695,
title = {Novel active avalanche paradigm for power semiconductor device extending extending SOA to 6.5kV/15kA},
author = {Liu Jiapeng and Liu Fucheng and Wu Jinpeng and Ren Chunpin and Pan Jianhong and Chen Zhengyu and Zhao Biao and Li Xiaozhao and Zhuang Chijie and Yu Zhanqing and Wei Xiaoguang and Zeng Rong},
journal= {arXiv preprint arXiv:2505.16695},
year = {2025}
}