Related papers: Putative hybridization gap in CaMn$_{2}$Bi$_{2}$ u…
We study the interplay between electronic correlations and hybridization in the low-energy electronic structure of CaMn$_2$Bi$_2$, a candidate hybridization-gap semiconductor. Utilizing a DFT+$U$ approach we find both the antiferromagnetic…
Recently, attention has been given to a system of He$^3$ bi-layers where a quantum criticality similar to the one in heavy fermion compounds has been observed [Science 317, 1356 92007)] In our previous analysis [Phys. Rev. B 79, 045112…
Exotic quantum phenomena often emerge near an electronic delocalization transition (EDT) from an antiferromagnetic insulating phase to a strongly correlated metallic state under pressure. We report the pressure-induced structural and…
The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of 1.8 eV. First-principles calculations predict that continuous Mg substitution at the Zn site will change the optical band gap…
Here we report the magnetic and electronic properties of recently discovered Ce$_{3}$Cd$_{2}$As$_{6}$. At ambient pressure, Ce$_{3}$Cd$_{2}$As$_{6}$ presents a semiconducting behavior with an activation gap of 74(1)~meV. At 136~K, a sudden…
In-situ high pressure single crystal X-ray diffraction study reveals that the quantum material CaMn$_2$Bi$_2$ undergoes a unique plane to chain structural transition between 2 and 3 GPa, accompanied by a large volume collapse. CaMn2Bi2…
By using first-principles electronic structure calculations, we have studied the magnetic interactions in a proposed BaZn$_2$P$_2$-based diluted magnetic semiconductor (DMS). For a typical compound Ba(Zn$_{0.944}$Mn$_{0.056}$)$_2$P$_2$ with…
We report the growth of high-quality single crystals of ThCr$_2$Si$_2$-type tetragonal BaMn$_2$P$_2$ and investigation of its structural, electrical transport, thermal and magnetic properties. Our results of basal plane electrical…
Growth of BaMn2As2 crystals using both MnAs and Sn fluxes is reported. Room temperature crystallography, anisotropic isothermal magnetization M versus field H and magnetic susceptibility chi versus temperature T, electrical resistivity in…
We report electrical and thermal transport properties of Mn-based material BaMn$_2$Bi$_2$ with ThCr$_2$Si$_2$ structure. The resistivity of the antiferromagnetic BaMn$_2$Bi$_2$ shows a metal-semiconductor transition at $\sim 80$ K with…
Recent band structure calculations have suggested the potential for band tuning in a chiral semiconductor, Ag$_3$AuTe$_2$, to zero upon application of negative strain. In this study, we report on the synthesis of polycrystalline…
The manganese pnictide CaMn$_2$Bi$_2$, with Mn atoms arranged in a puckered honeycomb structure, exhibits narrow-gap antiferromagnetism, and it is currently a promising candidate for the study of complex electronic and magnetic phenomena,…
Measurements of electrical resistivity were performed between 3 and 300 K at various pressures up to 2.8 GPa on the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = Pr, Nd). At lower pressures, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 exhibit…
Dibismuth dioxychalcogenides, Bi$_2$O$_2$Ch (Ch = S, Se, Te) are emerging class of materials for next generation electronics and thermoelectrics with an ultrahigh carrier mobility and excellent air stability. Among these, Bi$_2$O$_2$S is…
The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T)…
We report the effect of Sn doping on the transport properties of the topological insulator Bi_{2}Te_{2}Se studied in a series of Bi_{2-x}Sn_{x}Te_{2}Se crystals with 0 \leq x \leq 0.02. The undoped stoichiometric compound (x = 0) shows an…
We present inelastic neutron scattering measurements of the antiferromagnetic insulator CaMn$_2$Sb$_2$, which consists of corrugated honeycomb layers of Mn. The dispersion of magnetic excitations has been measured along the H and L…
This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…
We report measurements and calculations on the properties of the intermetallic compound Be$_5$Pt. High-quality polycrystalline samples show a nearly constant temperature dependence of the electrical resistivity over a wide temperature…
Two-dimensional layered semiconductor black phosphorus (BP), a promising pressure induced Dirac system as predicted by band structure calculations, has been studied by $^{31}$P-nuclear magnetic resonance. Band calculations have been also…