Related papers: Thermal evolution of silicon carbide electronic ba…
We report the temperature dependence of the zero-bias conductance of a single-electron transistor in the regime of weak coupling between the quantum dot and the leads. The Fano line shape, convoluted with thermal broadening, provides a good…
The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.
The electron and phonon temperature distribution function are calculated in semiconductors. We solved the coupled one-dimensional heat-diffussion equations in the linear approximation in which the physical parameters on the sample are…
Using the Eliashberg strong coupling theory with vertex correction, we calculate maps of transition temperatures (T$_{c}$) of electron-phonon superconductors in full parameter space. The maximums of transition temperatures for…
We uncover that the competition between electron-electron correlations and electron-phonon interactions gives rise to unexpectedly huge enhancement of the superconducting transition temperature, several hundreds percent larger ($\geq$ 200…
Environmental effects and intrinsic energy-loss processes lead to fluctuations in the operational temperature of solar cells, which can profoundly influence their power conversion efficiency. Here we determine from first principles the…
We present a new technique for measuring the critical temperature Tc in the high pressure, high Tc electron-phonon-driven superconducting hydrides. This technique does not require connecting leads to the sample. In the multiphonon region of…
The relative stability of SiC polytypes, changing with temperature, has been considered a paradox for about thirty years, due to discrepancies between theory and experiments. Based on ab-initio calculations including van der Waals…
Fundamental upper bounds on the electron-phonon interaction strength and superconducting transition temperature $T_c$ in metals are established based on the intrinsic instability of the equilibrium between electrons and the crystal lattice…
Thermal radiation from an unpatterned object is similar to that of a gray body. The thermal emission is insensitive to polarization, shows only Lambertian angular dependence, and is well modeled as the product of the blackbody distribution…
We calculate the critical temperature $T_c$ and the superconducting energy gaps $\Delta_n$ of a thin film superconductor system, where $\Delta_n$ is the superconducting energy gap of the $n$-th subband. Since the quantization of both the…
SiAlON is a prominent example of systems suitable as hosts for creating materials for light-emitting diodes (LEDs). In this work, the electronic structure of a series of semiordered and disordered SiAlON systems is investigated by means of…
The electron-phonon interaction contribution to the electronic energies is included in density functional total energy calculations with ab initio pseudopotentials via the Allen formalism [Phys. Rev. B 18, 5217 (1978)] to obtain temperature…
Renormalization of the electronic band gap due to electron-phonon coupling in the tetrahedral semiconductors diamond, silicon and cubic silicon carbide is studied from first principles. There is a marked difference between the coupling of…
Superconductors without inversion symmetry in their crystal structure are known to exhibit unconventional properties. Recently, based on the measured temperature dependence of the magnetic field penetration depth, superconductivity in…
Hexagonal CoSn is a newly-discovered frustrated kagome metal. It shows close-to-textbook flat bands and orbital-selective Dirac fermions, which are largely associated with its strongly correlated Co-3$d$ orbitals. Because correlated…
We studied the reflectivity spectra of amorphous silicon dioxide detected under vacuum UV synchrotron radiation as a function of temperature between 10 and 300 K. Kramers-Kronig dispersion analysis of reflectivity spectra allowed us to…
The temperature dependence of the first-order phonon mode of single crystal of Silicon (Si) is determined by Raman scattering in a broad temperature range of 4-623 K. Our studies reveal the anomalous red-shift of the Raman active phonon…
We measure the temperature dependence of the Raman spectra of metallic and semiconducting nanotubes. We show that the different trend in metallic tubes is due to phonon re-normalization induced by the variation in electronic temperature,…
While using first-principles-based Boltzmann transport equation approach to predict the thermal conductivity of crystalline semiconductor materials has been a routine, the validity of the approach is seldom tested for high-temperature…