Related papers: Quantum Anomalous Hall Effect by Coupling Heavy At…
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low…
The anomalous Hall effect is investigated for ferromagnetic Fe3Sn2 single crystal with geometrically frustrated kagome bilayer of Fe. The scaling behavior between anomalous Hall resistivity rho_{xy}^{A} and longitudinal resistivity rho_{xx}…
We propose a new family of the d0 orbital XY (X = K, Rb, Cs; Y = N, P, As, Sb, Bi) monolayers with abundant and novel topology and valley properties. The KN, RbN, RbP, RbAs, CsP, CsAs, and CsSb monolayers possess remarkable quantum…
We investigate topological features of electronic structures which produce large anomalous Hall effect in the non-collinear antiferromagnetic metallic states of anti-perovskite manganese nitrides by first-principles calculations. We first…
Topological insulators lacking time-reversal symmetry can exhibit the quantum anomalous Hall effect. Odd-layer thick MnBi$_2$Te$_4$ is a promising platform due to its intrinsic magnetic nature, however, quantization is rarely observed in…
The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However,…
The anomalous Hall effect has been indispensable in our understanding of numerous magnetic phenomena. This concerns both ferromagnetic materials, as well as diverse classes of antiferromagnets, where in addition to the anomalous and crystal…
Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time-reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes could…
The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of…
Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically-doped topological insulator completed a quantum Hall trio---quantum Hall effect (QHE), quantum…
The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE…
The quantum anomalous Hall (QAH) effect holds fundamental importance in topological physics and technological promise for electronics. It is generally believed that the QAH effect can only be realized in insulators. In this Letter, we…
We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material,…
The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. To realize this proposal, it is crucial to open a magnetic gap of surface states. However, recent…
We systematically investigate the influence of high pressure on the electronic transport properties of layered ferromagnetic materials, in particular, those of Fe$_3$GeTe$_2$. Its crystal sustains a hexagonal phase under high pressures up…
Recently, antiferromagnetic (AF) materials have attracted rapid attention, because they are considered as outstanding candidates to replace the widely used ferromagnets in the next generation of spintronics. We propose a magnetoresistance…
We show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel, independent of the interior layer magnetization…
The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable…
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic…
Novel 2D material CrI3 reveals unique combination of 2D ferromagnetism and robust excitonic response. We demonstrate that the possibility of the formation of magnetic topological defects, such as Neel skyrmions, together with large…