The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, we realized the QAH effect in the magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr2O3. Through polarized neutron reflectometry (PNR), we find a strong exchange coupling between CBST and Al-Cr2O3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. The interfacial coupling results in an exchange-biased QAH effect. We further demonstrate that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr2O3 layer. Our work demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.
@article{arxiv.2205.03596,
title = {Exchange-biased quantum anomalous Hall effect},
author = {Peng Zhang and Purnima P. Balakrishnan and Christopher Eckberg and Peng Deng and Tomohiro Nozaki and Sukong Chong and Patrick Quarterman and Megan E. Holtz and Brian B. Maranville and Lei Pan and Eve Emmanouilidou and Ni Ni and Masashi Sahashi and Alexander Grutter and Kang L. Wang},
journal= {arXiv preprint arXiv:2205.03596},
year = {2022}
}