Related papers: Quantum Anomalous Hall Effect by Coupling Heavy At…
The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic…
Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the…
The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and…
The quantum anomalous Hall effect is a intriguing topological nontrivial phase arising from spontaneous magnetization and spin-orbit coupling. However, the tremendously harsh realizing requirements of the quantum anomalous Hall effects in…
Nontrivial band topology combined with magnetic ordering can produce quantum anomalous Hall insulator (QAHI), which may lead to advances in device concepts. Here, through first-principles calculations, stable monolayer $\mathrm{Fe_2Br_2}$…
We theoretically show that the three-dimensional (3D) topological insulator (TI)/thin-film ferromagnetic metal (FMM) bilayer structure is possible to be a quantum anomalous Hall (QAH) insulator with a wide global band gap. Studying the band…
Heterostructures between topological insulators (TI) and magnetic insulators represent a pathway to realize the quantum anomalous Hall effect (QAHE). Using density functional theory based systematic screening and investigation of…
The quantum anomalous Hall (QAH) effect is a topologically nontrivial phase, characterized by a non-zero Chern number defined in the bulk and chiral edge states in the boundary. Using first-principles calculations, we demonstrate the…
Due to the potential applications in the low-power-consumption spintronic devices, the quantum anomalous Hall effect (QAHE) has attracted tremendous attention in past decades. However, up to now, QAHE was only observed experimentally in…
Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After…
We present systematic first-principles results for the electronic and magnetic properties of two-dimensional transition-metal trihalide monolayers MX3 (M = V, Cr, Mn, Fe, Ni, Pd; X = F, Cl, Br, I), focusing on their potential to host the…
The exploration of topological Dirac surface states is significant in the realms of condensed matter physics and future technological innovations. Among the materials garnering attention is Sb$_{2}$Te$_{3}$, a compound that theoretically…
The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators - topologically non-trivial states of two-dimensional matter with broken…
The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the…
The quantum anomalous Hall effect is a intriguing quantum state which exhibits the chiral edge states in the absence of magnetic field. While the search for quantum anomalous Hall insulators is still active, the researchers mainly search…
The high Chern-number quantum anomalous Hall effect (QAHE) is significant and fascinating due to the presence of multiple dissipationless chiral edge states. Here, we predict that monolayer NiSbO3 possesses the Chern number C = 3, confirmed…
Using the density functional theory calculations, we predict that several monolayer chromium-based materials exhibit a triple-Q tetrahedral magnetic insulating ground state. By studying the effect of biaxial strain on monolayer…
The development of quantum materials and the tailoring of their functional properties is of fundamental interest in materials science. Here, a new design concept is proposed for the robust quantum anomalous Hall effect via entropy…
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin…
Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped…