Related papers: Enhanced spin transfer torque in platinum/ferromag…
Current-driven magnetization dynamics of single ferromagnets in heavy metal/ferromagnet bilayers has been recently realized. In this work, spin torque induced by so-called Rashba spin-orbit coupling and spin Hall effect are considered…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations. Since the widely accepted analytic…
Efficient spin/charge interconversion is desired to develop innovative spin-based devices. So far, the interconversion has been performed by using heavy atomic elements, strong spin-orbit interaction of which realizes the interconversion…
Spin transfer - the transfer of angular momentum from spin-polarized electrical current to magnetic materials - has been extensively researched as an efficient mechanism for the electronic manipulation of the static and dynamic states in…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
Spin-orbit torques (SOTs) from transition metal oxides (TMOs) in conjunction with magnetic materials have recently attracted tremendous attention for realizing high-efficient spintronic devices. SrRuO3 is a promising candidate among TMOs…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…
Robust spin Hall effects (SHE) have recently been observed in non-magnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent…
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…
We report on first-principles calculations of spin-transfer torque (STT) in epitaxial magnetic tunnel junctions (MTJs) based on ferrimagnetic tetragonal Mn$_3$Ga electrodes, both as analyzer in an Fe/MgO stack, and also in an analogous…
We report the frequency dependence of the spin current emission in a hybrid ferrimagnetic insulator/normal metal system as function of the insulating layer thickness. The system is based on a yttrium iron garnet (YIG) film [0.2, 1, and 3…
Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…
Spin-transfer torque (STT) effects on the stationary forced response of nanoscale ferromagnets subject to thermal fluctuations and driven by an ac magnetic field of arbitrary strength and direction are investigated via a generic nanopillar…
The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter,…
We generalize the spin Hall angle to laser pulses of finite frequencies in the linear response regime and predict a giant optical spin Hall effect. Namely, for certain transition metal elements, at particular frequencies, the spin current…
We measured spin transport in nonferromagnetic (NM) metallic multilayers from the contribution to damping due to spin pumping from a ferromagnetic Co90Fe10 thin film. The multilayer stack consisted of NM1/NM2/Co90Fe10(2 nm)/NM2/NM3 with…